Control method and control device for chemical mechanical grinding and method and equipment for chemical mechanical grinding

Abstract

The invention provides a control method and a control device for chemical mechanical grinding and a method and equipment for chemical mechanical grinding. The control device for chemical mechanical grinding comprises a cleaning agent spraying unit and a control unit. The control unit is used for controlling cleaning agent spraying of the cleaning agent spraying unit and lifting of a grinding head of chemical mechanical grinding equipment, and the cleaning agent spraying unit sprays abrasive cleaning agent on a wafer of the grinding head under the control of the control unit. The control unit enables the grinding head to drive the wafer to be lifted when a grinding cushion cleaning device of the chemical mechanical grinding equipment starts cleaning a grinding cushion for a first time but does not return to the normal state, and enables the cleaning agent spraying unit to spray the cleaning agent to the wafer when the grinding cushion cleaning device starts cleaning the grinding cushion for a second time, wherein the first time is shorter than the second time.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more specifically, the present invention relates to a chemical mechanical polishing control method, a chemical mechanical polishing control device, a chemical mechanical polishing method using the chemical mechanical polishing control method, and a chemical mechanical polishing control device configured with the chemical mechanical polishing control method. Device for chemical mechanical grinding equipment. Background technique [0002] Chemical mechanical polishing (CMP, chemical mechanical polishing, also called chemical mechanical polishing) is currently widely used in the surface planarization process in the semiconductor manufacturing process. The process of chemical mechanical polishing is to place the wafer on a rotating polishing pad, add a certain pressure, and use chemical polishing liquid to polish the wafer to make the wafer flat. In the process of grinding sili...

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Problems solved by technology

[0005] However, when the chemical mechanical polishing equipment is grinding wafers (at this moment, the polishing liquid is flowed upwards to the wafer polishing pad that is closely connected to the wafer), if the chemical mechanical polishing equipment is due to the failure of the polishing pad cleaning device (for example, the brush is in the If the grinding pad is stuck when brushing the polishing pad) and an alarm message is issued, then the grinding head that is grinding the wafer will be lifted up together with the wafer to leave the currently grinding pad; and because the wafer currently being ground is in the state of being ground , there will be residual polishing fluid on its surface, so that after the polished wafer leaves the polishing pad currently being polished, the residual polishing fluid will chemically react with the wafer, thus removing the surface of the wafer from the inside of the hole. of tungsten etched away

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