Method for judging purity of silicon for crystalline silicon solar battery

A solar cell, crystalline silicon technology, applied in the investigation phase/state change and other directions, can solve the problem of single test results, and achieve the effects of high measurement accuracy, accurate data and good stability

Inactive Publication Date: 2012-07-25
TRINA SOLAR CO LTD
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Problems solved by technology

Due to the limitations of the above test methods and equipment, the test results are relatively single, so it is very important to choose a fast, simple and accur

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  • Method for judging purity of silicon for crystalline silicon solar battery
  • Method for judging purity of silicon for crystalline silicon solar battery
  • Method for judging purity of silicon for crystalline silicon solar battery

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Embodiment Construction

[0021] As the purity of a material decreases, its melting point decreases and its melting zone widens. Even tiny amounts of impurities can drastically change the width of the melting zone. The higher the purity, the higher the melting point. The sharper the melting peak. The present invention utilizes the principle that the melting point drops due to material impurity to measure the material purity.

[0022] A method for judging the purity of silicon material used in crystalline silicon solar cells, the steps comprising:

[0023] a. Weigh a silicon material sample of a certain weight, the weight of the silicon material sample is between 1-7mg;

[0024] b. In the differential thermal-thermogravimetric simultaneous thermal analyzer (SDT), with a certain flow rate of gas protection, the flow rate is 80-120mL / min, in a certain heating rate and temperature range, the silicon material sample melts, and the heating rate At 3-100°C / min, the temperature range is within 0-1500°C;

[...

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Abstract

The invention relates to a method for judging purity of silicon for a crystalline silicon solar battery, which comprises the steps of: a, weighing silicon samples with given weight, b, adopting gas shield at a certain flow (80-120mL/min) and allowing the silicon samples to be fused at a certain heating rate (3-100 DEG C/min) and in a certain temperature range (0-1500 DEG C) in a simultaneous differential scanning calorimeter-thermo gravimetric analyzer (SDT), c, regressing a linear relationship between purities and melting points according to at least three samples with known purities and correct melting point testing results of the samples based on testing conditions set in Steps a and b, and d, calculating the purity of unknown samples according to the linear relationship between the purities and the melting points for other samples with unknown purities as long as the melting points of the samples with unknown purities are measured. The method has the beneficial effects that: 1, the operation is automatic, the total cost is lower, and the quality control is facilitated, 2, the method is a physical method for directly measuring the changes in the melting points, and is scientific and reasonable, and 3, the measuring precision is high, and the stability is higher.

Description

technical field [0001] The invention relates to a method for evaluating the purity of silicon materials used in crystalline silicon solar cells. Background technique [0002] Silicon is one of the most widely distributed elements in nature. It is an excellent semiconductor material and an indispensable raw material for integrated circuits and electronic components that are encouraged by the state. Improving the purity of silicon materials has become one of the important topics at home and abroad. However, for the manufacture of materials such as solar cells, the purity of silicon is required to be higher than 99.99%. [0003] With the development of the photovoltaic industry, the requirements for the control of silicon raw materials are getting higher and higher. In order to quickly, accurately and reasonably know the status of silicon raw materials, new testing methods are needed. At present, most of the testing methods are to quantitatively measure the concentration of i...

Claims

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Application Information

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IPC IPC(8): G01N25/04
Inventor 朱加尖王昭云徐洁
Owner TRINA SOLAR CO LTD
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