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Radio-frequency power amplifier multichip module and generation method thereof

A power amplifier and radio frequency power technology, which is applied in amplifiers, amplifiers with semiconductor devices/discharge tubes, electric solid-state devices, etc., can solve problems such as difficult performance, high cost pressure, and difficult performance improvement

Active Publication Date: 2015-02-18
LANSUS TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The advantage of this solution is low cost, and the disadvantage is that the technology is difficult and the performance is difficult to improve
[0004] Generally speaking, the RF power amplifier needs to provide an output power of about 27 ~ 35dBm. figure 2 The power amplifier scheme of the pure CMOS process shown has its power consumption, size and reliability tested, and it is difficult to compare with the performance in terms of performance. figure 1 The GaAs scheme shown is quite
while using as figure 1 Although the size of GaAs bare chips has been continuously reduced in recent years with the efforts of various companies, the high price of GaAs wafers makes this type of product still face considerable cost pressure.

Method used

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  • Radio-frequency power amplifier multichip module and generation method thereof
  • Radio-frequency power amplifier multichip module and generation method thereof
  • Radio-frequency power amplifier multichip module and generation method thereof

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Embodiment Construction

[0038] The English abbreviations used in the present invention mainly include: PHEMT (Pseudomorphic HEMT) pseudo-type high electron mobility transistor; CMOS (Complementary Metal Oxide Semiconductor) complementary metal oxide semiconductor; GaAs gallium arsenide; SOI (Silicon-On-Insulator) Silicon-on-insulator; SOS sapphire silicon; SiGe silicon germanium.

[0039] The main concept of the present invention is to adopt CMOS bare chips as the front-stage circuit of the radio frequency power amplifier, and adopt GaAs and / or SiGe bare chips as the post-stage circuit of the radio frequency power amplifier, so that the GaAs bare chip in the whole module of the radio frequency power amplifier can be significantly reduced. chip or SiGe die size, thereby significantly reducing the cost, while enabling the performance of RF power amplifiers to reach the level of the full GaAs die or SiGe die solution.

[0040] The principles and features of the present invention are described below in c...

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Abstract

A radio frequency (RF) power amplifier includes: a pre-stage amplifier configured to amplify an input power to the RF power amplifier; and a post-stage amplifier configured to amplify an output power of the pre-stage amplifier; wherein the pre-stage amplifier comprises a CMOS (Complementary Metal Oxide Semiconductor) amplifier, and the post-stage amplifier comprises a GaAs (Gallium Arsenide) amplifier or a SiGe (Silicon Germanium) amplifier.

Description

technical field [0001] The invention relates to a radio frequency circuit, in particular to a radio frequency power amplifier and a packaging method thereof. Background technique [0002] In the production field of power amplifier multi-chip modules, the structure of traditional RF power amplifiers is as follows: figure 1 shown. figure 1 It is a structural schematic diagram of a radio frequency power amplifier in the prior art. Such as figure 1 As shown, in the prior art, the radio frequency power amplifier usually includes a GaAs (gallium arsenide) die for amplification of the signal path; a PHEMT (Pseudomorphic HEMT, pseudo-type high electron mobility transistor) Switch die , used to switch and switch the transceiver frequency band; a CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) controller die is used to provide bias and control signals for the signal amplification module and the switch module. In different applications, there...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/38H01L25/065H01L21/98
CPCH01L2223/6644H01L21/50H01L2224/16145H01L2924/3011H01L2224/48137H01L2224/48145H01L2224/48227H01L2224/73253H01L2225/06513H01L2224/32145H01L2225/0651H01L23/66H03F3/193H01L2224/73265H01L25/0652H01L2924/30107H01L2225/06506H01L2224/32225H01L24/73H01L2924/00012H01L2924/00
Inventor 马平西张黎阳赵骞
Owner LANSUS TECH INC