Radio-frequency power amplifier multichip module and generation method thereof
A power amplifier and radio frequency power technology, which is applied in amplifiers, amplifiers with semiconductor devices/discharge tubes, electric solid-state devices, etc., can solve problems such as difficult performance, high cost pressure, and difficult performance improvement
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[0038] The English abbreviations used in the present invention mainly include: PHEMT (Pseudomorphic HEMT) pseudo-type high electron mobility transistor; CMOS (Complementary Metal Oxide Semiconductor) complementary metal oxide semiconductor; GaAs gallium arsenide; SOI (Silicon-On-Insulator) Silicon-on-insulator; SOS sapphire silicon; SiGe silicon germanium.
[0039] The main concept of the present invention is to adopt CMOS bare chips as the front-stage circuit of the radio frequency power amplifier, and adopt GaAs and / or SiGe bare chips as the post-stage circuit of the radio frequency power amplifier, so that the GaAs bare chip in the whole module of the radio frequency power amplifier can be significantly reduced. chip or SiGe die size, thereby significantly reducing the cost, while enabling the performance of RF power amplifiers to reach the level of the full GaAs die or SiGe die solution.
[0040] The principles and features of the present invention are described below in c...
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