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Method for growing nitride light emitting diode by adopting metal-organic chemical vapor deposition (MOCVD) technology

A technology of light-emitting diodes and nitrides, applied in gaseous chemical plating, coatings, electrical components, etc., can solve the problems of poor electrical parameters such as leakage and antistatic, and unsatisfactory effects

Inactive Publication Date: 2012-07-25
张小光 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, many solutions have been proposed for the problems of poor electrical parameters such as leakage and antistatic properties of nitride reflective diodes, such as adding AlGaN insertion layers in the material structure, etc.
However, the effect is still not ideal, and the electrical properties of nitride light-emitting diodes need to be further improved.

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  • Method for growing nitride light emitting diode by adopting metal-organic chemical vapor deposition (MOCVD) technology
  • Method for growing nitride light emitting diode by adopting metal-organic chemical vapor deposition (MOCVD) technology
  • Method for growing nitride light emitting diode by adopting metal-organic chemical vapor deposition (MOCVD) technology

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Embodiment Construction

[0019] The invention relates to a method for growing gallium nitride epitaxy on a pattern substrate. Using MOCVD technology, using high-purity NH 3 As N source, high-purity N 2 or H 2 As carrier gas, trimethylgallium (TMGa) or triethylgallium (TEGa), trimethylindium (TMIn) and trimethylaluminum (TMAl) are respectively used as gallium source, indium source and aluminum source; silane (SiH 4 ) is an N-type dopant, magnesium dicene (CP 2 Mg) is a P-type dopant. Such as figure 2 As shown, at first, in the MOCVD reaction chamber, pattern substrate 21 is subjected to heat treatment: in H 2 Under the atmosphere, the temperature is maintained at 1100-1180°C, and the baking is continued for 600-2000 seconds; then, the temperature and pressure of the reaction chamber are adjusted: the temperature is 510-570°C, the pressure is 400mbar-800mbar, and the metal source and NH 3 , grow a nitride nucleation layer, when the thickness of the nucleation layer reaches 20-50nm, stop feeding t...

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Abstract

The invention relates to a method for growing a nitride light emitting diode by adopting a metal-organic chemical vapor deposition (MOCVD) technology. The method comprises the following steps of: selecting a substrate; growing a gallium nitride nucleating layer on the substrate; growing an unintentional doped gallium nitride layer with the thickness of 2 to 4 mum on the gallium nitride nucleating layer; growing an N-type gallium nitride layer 1 with the thickness of 0.5 to 1.5 mum on the unintentional doped gallium nitride layer; growing a current expansion layer for enhancing current expansion on the N-type gallium nitride layer 1; growing an N-type gallium nitride layer with the thickness of 1 to 2 mum on the current expansion layer; and sequentially growing an active layer and P-type gallium nitride on the current expansion layer to obtain a complete LED epitaxial structure. According to the method for growing the nitride light emitting diode by adopting the MOCVD technology, the current expansion situation of the LED can be improved effectively, so that the leakage performance and the antistatic performance of the final LED are improved.

Description

technical field [0001] The invention relates to a method for growing a nitride light emitting diode, in particular to a method for growing a nitride light emitting diode by MOCVD. technical background [0002] Light-emitting diodes have the advantages of energy saving, environmental protection, and long life. With the attention and promotion of governments in various countries, they have been widely used in LCD backlights, outdoor displays, landscape lighting, and general lighting. Launched another revolution in the history of human lighting. [0003] The sapphire substrate has become the mainstream substrate for gallium nitride heteroepitaxy because of its relatively low cost. However, due to the large lattice mismatch and thermal mismatch between sapphire and GaN materials, a large number of dislocations and defects are introduced into the GaN epitaxial layer, and the defect density is as high as 10 8 -10 10 cm -2 , resulting in an increase in the carrier leakage path,...

Claims

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Application Information

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IPC IPC(8): H01L33/00C23C16/455H01L33/14
Inventor 张小光张小亮
Owner 张小光