Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Band-pass filter based on memristor

A memristor and filter technology, applied in the field of memristors, can solve the problems of large temperature coefficient, narrow passband, affecting the accuracy and stability of analog filters, and achieve simple structure, simple circuit structure, control and adjustment. Simple and convenient effects

Inactive Publication Date: 2014-12-03
WUHAN UNIV OF SCI & TECH
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the stability of the mechanical potentiometer is not high, and it is not easy to realize automatic control, while the resistance value of the digital potentiometer is a discrete value, the temperature coefficient is large and the passband is narrow, which greatly affects the accuracy of the analog filter. and stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Band-pass filter based on memristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, which are not intended to limit the protection scope of the present invention.

[0013] A memristor-based bandpass filter. Its structure is as figure 1 As shown, the filter is composed of a control module 1 , a low-pass filter module 3 and a high-pass filter module 6 . The output terminals CV11, CS1, CV12, CV21, CS2 and CV22 of the control module 1 are respectively connected to the low-pass filter module 3, and the output terminals CV31, CS3, CV32, CV41, CS4 and CV42 of the control module 1 are respectively connected to the high-pass filter module 6 The low-pass filter module 3 is connected to the input signal of the filter, the high-pass filter module 6 is connected to the output signal of the filter, and the low-pass filter module 3 is connected to the high-pass filter module 6 .

[0014] Low-pass filter module 3 such as figure 1 Shown is co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a band-pass filter based on a memristor. The technical scheme is showed as that the filter comprises a control module (1), a low-pass filter module (3) and a high-pass filter module (6), wherein the low-pass filter module (3) is formed by connection of the output end VLP1 of a first memristor circuit (2) and the input end VIN2 of a first memcapacitor equivalent circuit (4); and the high-pass filter module (6) is formed by connection of the output end VHP1 of a second memcapacitor equivalent circuit (5) and the input end VIN4 of a second memristor circuit (7). The input end of the first memristor circuit (2), the input end of the first memcapacitor equivalent circuit (4), the input end of the second memcapacitor equivalent circuit (5) and the input end of the second memristor circuit (7) are correspondingly connected with the output ends of the control module (1). The input end VIN1 of the first memristor circuit (2) is externally connected with an input signal of a filter; and the output end of the second memristor circuit (7) is externally connected with an output signal of the filter. The band-pass filter provided by the invention has the characteristics of simplicity in structure, highness in precision, easiness to control and the like.

Description

technical field [0001] The invention belongs to the technical field of memristors. In particular, it relates to a memristor-based bandpass filter. Background technique [0002] Memristor is the fourth basic circuit element besides resistors, capacitors and inductors. In 1971, Cai Shaotang first proposed the concept of memristor and demonstrated the scientific basis for its existence. In 2008, the HP laboratory discovered a nanometer two-terminal resistor with memristive properties, which further confirmed the existence of memristors. [0003] The resistance value of the memristor is related to the charge flowing through the device, that is, when the charge flows in one direction, the resistance will increase, and when the charge flows in the opposite direction, the resistance will decrease. This characteristic makes the memristor programmable The field of analog circuits has broad application prospects. [0004] In the traditional analog bandpass filter circuit, in order ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H7/12
Inventor 蒋旻段宗胜陈波甘朝晖
Owner WUHAN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com