Method and apparatus for treating exhaust gases in a substrate processing system

A technology for processing systems and equipment, which is applied in the field of emission systems and can solve problems such as PFC and/or GWG weakening without foreline operating pressure

Active Publication Date: 2016-05-11
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is currently no method and apparatus for controlling the operating pressure of the foreline (and thus the RPS or IPS) to optimize PFC and / or GWG attenuation

Method used

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  • Method and apparatus for treating exhaust gases in a substrate processing system
  • Method and apparatus for treating exhaust gases in a substrate processing system
  • Method and apparatus for treating exhaust gases in a substrate processing system

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Embodiment Construction

[0015] Provided herein are methods and apparatus for treating exhaust gases in the foreline of a substrate processing system. Embodiments of the present invention may advantageously provide improved perfluorocarbon (PFC) and global greenhouse gas (GWG) abatement efficiencies. Embodiments of the present invention improve abatement efficiency by, for example, reacting with one or more reactant gases to control the pressure in the foreline to optimize the decomposition of the PFC and / or GWG. For example, the pressure may be controlled in real time to maintain the pressure within a desired operating range, or may be controlled in response to one or more reactant gases injected into the foreline.

[0016] For example, in some embodiments, a plasma including a reactant (e.g., water) can be formed in or delivered to a process foreline while simultaneously controlling the pressure in the process foreline to optimize Form and / or maintain a plasma efficiently. In some embodiments, a m...

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PUM

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Abstract

Provided herein are methods and apparatus for treating exhaust gases in the foreline of a substrate processing system. In some embodiments, an apparatus for processing exhaust gas in a foreline of a substrate processing system includes: a plasma source coupled to the foreline of a processing chamber; a reactant source coupled to a foreline upstream of the plasma source; and a foreline gas injection kit coupled to the foreline to controllably deliver gas to the foreline, wherein the foreline injection kit It includes: a pressure regulator for setting a set point of the gas delivery pressure of the foreline; and a first pressure gauge connected to monitor the delivery pressure of the gas upstream of the foreline.

Description

technical field [0001] Embodiments of the invention relate generally to the manufacture of electronic devices and, more particularly, to systems and methods for mitigating emissions from electronic device manufacturing systems. Background technique [0002] Remote plasma sources (RPS) or inline plasma sources (IPS) have been used for the abatement of perfluorocarbons (PFCs) and global greenhouse gases (GWGs). For example, an RPS or IPS may be installed between a high vacuum pump (such as a turbo pump) and a pre-pump (such as a dry vacuum pump) in the foreline of the vacuum system of the substrate processing system. However, there are currently no methods and apparatus for controlling the operating pressure of the foreline (and thus the RPS or IPS) to optimize PFC and / or GWG attenuation. Accordingly, the inventors of the present application provide improved methods and apparatus for treating exhaust gases in treatment systems. Contents of the invention [0003] Provided h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02H01L21/67B01D2258/0216B01D2259/818B01D53/32Y02C20/30B01D53/92H01J37/321H01L21/02046H01L21/0234H01L21/67034H05H1/46B01D2259/80B01D2259/122C23C16/4412
Inventor 科林·约翰·迪金森迈赫兰·莫勒姆丹尼尔·O·克拉克
Owner APPLIED MATERIALS INC
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