Method and apparatus for treating exhaust gases in a substrate processing system

Abstract

Provided herein are methods and apparatus for treating exhaust gases in the foreline of a substrate processing system. In some embodiments, an apparatus for processing exhaust gas in a foreline of a substrate processing system includes: a plasma source coupled to the foreline of a processing chamber; a reactant source coupled to a foreline upstream of the plasma source; and a foreline gas injection kit coupled to the foreline to controllably deliver gas to the foreline, wherein the foreline injection kit It includes: a pressure regulator for setting a set point of the gas delivery pressure of the foreline; and a first pressure gauge connected to monitor the delivery pressure of the gas upstream of the foreline.

Description

technical field

[0001] Embodiments of the invention relate generally to the manufacture of electronic devices and, more particularly, to systems and methods for mitigating emissions from electronic device manufacturing systems. Background technique

[0002] Remote plasma sources (RPS) or inline plasma sources (IPS) have been used for the abatement of perfluorocarbons (PFCs) and global greenhouse gases (GWGs). For example, an RPS or IPS may be installed between a high vacuum pump (such as a turbo pump) and a pre-pump (such as a dry vacuum pump) in the foreline of the vacuum system of the substrate processing system. However, there are currently no methods and apparatus for controlling the operating pressure of the foreline (and thus the RPS or IPS) to optimize PFC and / or GWG attenuation. Accordingly, the inventors of the present application provide improved methods and apparatus for treating exhaust gases in treatment systems. Contents of the invention

[0003] Provided h...

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