20 results about "Foreline" patented technology

A testing device for measuring the deflation performance of a vacuum material comprises a mechanical pump, a first molecular pump, a backing valve, a magnet and a limiting block, one side of the mechanical pump is connected with the first molecular pump through a pipeline, the backing valve is installed on the pipeline between the mechanical pump and the first molecular pump, one side of the first molecular pump is connected with a second molecular pump through a pipeline, and the second molecular pump is connected with the magnet. A resistance gauge is installed on the pipeline between the forestage valve and the first molecular pump, one side of the second molecular pump is respectively connected with an ultrahigh vacuum micrometering valve and an ultrahigh vacuum stop valve through pipelines, and an ultrahigh vacuum deflation valve is installed on the pipeline at the front end of the ultrahigh vacuum micrometering valve. A dynamic conductance method is adopted to qualitatively and quantitatively analyze the deflation performance of a material, the deflation type, the deflation rate, the deflation amount of different gases and the total deflation amount of the material are mainly tested, a heater can be switched to bake and degas all backgrounds in a vacuum chamber, and the vacuum degree of the backgrounds is improved.

A pre-stage pipeline component for a four-station processing module (QSM) is provided. In some examples, the pre-stage pipeline component includes: four inlets, each inlet being connectable to a chamber port of a processing module of the QSM; and an outlet, which is directly or indirectly connectable to a vacuum source. A first pre-stage pipeline bifurcation is provided adjacent to the outlet of the pre-stage pipeline component. Two second bifurcations are each provided between the first pre-stage pipeline bifurcation and a corresponding pair of the inlets. The first pre-stage pipeline bifurcation and the second bifurcations divide the pre-stage pipeline component into three pipe segments. The respective diameters of the pre-stage pipelines in each pipe segment: gradually increase at the corresponding bifurcations in the gas flow direction from at least one of the inlets to the outlet of the pre-stage pipeline component, and are constant within the corresponding pipe segments of the pre-stage pipeline component.

A kit of parts for forming a foreline (112) for coupling a process chamber (108) to a vacuum pumping and / or abatement system (110), the kit comprising: a plurality of foreline sections (122, 124); wherein each foreline section (122, 124) is a tube comprising: a first end portion (122a, 124a) that is substantially straight; a second end portion (122b, 124b) that is substantially straight, opposite the first end portion (122a, 124a); and an intermediate portion (122c, 124c) disposed between the first and second end portions (122a-b, 124a-b) and connected to the first and second end portions (122a-b, 124a-b) by respective bends (122d-e, 124d-e), the first and second end portions (122a-b, 124a-b) being substantially parallel to each other; the intermediate portion (122c, 124c) being inclined with respect to the first and second end portions (122a-b, 124a-b); and the foreline sections (122, 124) being configured to be attached together so as to form a continuous foreline (112).

A system and method for controlling pressure in a foreline of a processing system are disclosed herein that reduce variation in foreline pressure. In one example, a processing system is provided that includes a first process chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an outlet. The inlet of the first pump coupled to an exhaust port of the first process chamber. The foreline is coupled to the outlet of the first pump. The first foreline pressure control system is fluidly coupled to the foreline downstream of the first pump. The first foreline pressure control system is operable to control a pressure in the foreline independent from operation of the first pump.

Embodiments of an apparatus for coating a plurality of gas lines are provided herein. In some embodiments, an apparatus for coating a plurality of gas lines via an ALD process includes: an oven having an enclosure that defines an interior volume configured to house the plurality of gas lines, the enclosure having a door configured for transferring the plurality of gas lines into and out of the interior volume; a plurality of inlet ports disposed through a first wall of the enclosure; a plurality of exhaust ports disposed through a second wall of the enclosure; a fluid panel disposed outside of the oven and coupled to the plurality of inlet ports via corresponding ones of a plurality of fluid distribution assemblies; and a foreline disposed outside of the oven and coupled to the plurality of exhaust ports.

Semiconductor processing systems and system components are described for providing regenerative heating to a foreline component. A system includes a plasma-based processing chamber. The processing chamber includes one or more fluid paths configured to circulate a heat transfer fluid. The system also includes one or more vacuum systems configured to exhaust process gases from the processing chamber, the one or more vacuum systems including one or more vacuum pumps and a foreline vent. The system includes a foreline regenerator. The foreline regenerator includes a regenerator shell at least partially surrounding the foreline vent, the regenerator shell including a heat transfer fluid input and a heat transfer fluid output, wherein the heat transfer fluid input is coupled to an output of the processing chamber.

A foreline assembly for a quad station process module (QSM) is provided. In some examples, a foreline assembly comprises four inlets each connectable to a chamber port of a process module of the QSM and an outlet connectable directly or indirectly to a vacuum source. A first foreline bifurcation is disposed proximate the outlet of the foreline assembly. Two second bifurcations are each disposed between the first foreline bifurcation and a respective pair of the inlets. The first and second bifurcations divide the foreline assembly into three sections. A respective diameter of a foreline in each section increases stepwise at a respective bifurcation in a direction of gas flow from at least one of the inlets to the outlet of the foreline assembly and is constant within a respective section of the foreline assembly.

The utility model relates to vacuum degassing furnace technical field, and disclose a kind of multi-station vacuum degassing furnace, including cavity, mechanical pump and molecular pump, through the front stage pipeline setting in the front stage valve of mechanical pump output end, setting in the front stage valve and molecular pump between the front stage air release valve, through connecting pipeline setting in the molecular pump input end of molecular pump plug-in valve, setting in the molecular pump and molecular pump plug-in valve between the vacuum gauge.The multi-station vacuum degassing furnace, through the three-stage vacuum system cooperation of mechanical pump, molecular pump and ion pump and the collaborative control of front stage valve, molecular pump plug-in valve and ion pump plug-in valve, the efficient vacuum pumping of multi-station vacuum degassing furnace is realized, heating controller and heating element cooperate to ensure cavity temperature stability, high vacuum gauge tube real-time monitoring vacuum degree and through total controller realize automation control, host computer provides intuitive operation interface, overall system structure is compact, control is accurate, energy consumption is low.

An exemplary semiconductor processing system may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The system may include at least one emission reduction system coupled with each pump. The system may include a plurality of exhaust lines extending between each pump and the abatement system. The system may include a dilution gas source coupled with each exhaust line. The system may include a mass flow controller coupled between the dilution gas source and each exhaust line. The system may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with a controller of the gas source that may control the flow of gas to the chamber based on measurements from the temperature sensor.

The utility model discloses a pressure detection device of a preceding-stage pipeline and thin film deposition equipment, the device comprises the preceding-stage pipeline, a mounting pipe and a vacuum gauge, the first end of the mounting pipe is connected with the vacuum gauge, and the second end of the mounting pipe passes through the side wall of the preceding-stage pipeline and extends into the preceding-stage pipeline; and an air inlet is formed in the second end of the mounting pipe, and the air inlet is opposite to the airflow direction of air in the preceding-stage pipeline. According to the application, the air inlet of the mounting pipe of the vacuum gauge extends into the preceding-stage pipeline and is arranged opposite to the airflow direction, so that dust or gas byproducts in the preceding-stage pipeline can be prevented from entering the mounting pipe in a turning manner, the blockage or zero drift of the vacuum gauge is avoided, the detection precision of the vacuum gauge is improved, and the service life of the vacuum gauge is prolonged.

The present invention provides a harmful gas treatment apparatus, which is an apparatus installed in a semiconductor manufacturing facility and configured to treat harmful components contained in a gas, wherein the semiconductor manufacturing facility comprises: a semiconductor process chamber; a foreline exhaust pipe extending from the semiconductor process chamber; a vacuum pump for discharging gas from the semiconductor process chamber through the foreline exhaust pipe; and a pump exhaust pipe through which the gas discharged from the vacuum pump flows, and the harmful gas treatment apparatus comprises: a vacuum plasma reactor installed on the foreline exhaust pipe and generating a plasma reaction with respect to the gas discharged from the semiconductor process chamber, to perform plasma treatment on the gas; a power supply device for supplying power to the vacuum plasma reactor; and a wet scrubber connected to the pump exhaust pipe and treating, in a wet manner, the entire gas discharged from the vacuum pump.

An exhaust gas processing apparatus includes a first chamber and a second chamber in parallel between a processing chamber and an exhaust pump, at least one foreline connecting the first chamber and the second chamber to the processing chamber and the exhaust pump, a first plasma source connected to the first chamber and the second chamber, and a second plasma source connected to the first chamber and the second chamber, wherein the first plasma source generates a first treatment material, and the second plasma source generates a second treatment material, different from the first treatment material.

A kit of parts for forming a foreline for coupling a process chamber to a vacuum pumping and / or abatement system, the kit comprising: a plurality of foreline segments; wherein each foreline segment is a pipe that comprises: a first substantially straight end portion; a second substantially straight end portion opposite to the first end portion; and an intermediate portion disposed between the first and second end portions and connected to the first and second end portions by respective bends; the first and second end portions are substantially parallel to each other; the intermediate portion is oblique to the first and second end portions; and the foreline segments are configured to be attached together so as to form a continuous foreline.

In one embodiment, a processing system for semiconductor manufacturing, includes a chamber housing, a first process chamber, a second process chamber and a foreline disposed in the chamber housing and between the first process chamber and the second process chamber. The first and second process chambers are in the chamber housing and each includes a pump ring and a liner. The pump ring includes a port and baffle. The pump rings and liners each partially define a first and second process volume respectively. The foreline includes a first exhaust chamber fluidly coupled to the first process volume and a second exhaust chamber fluidly coupled to the second process volume.

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

To provide a method and a system for mitigating CVD foreline growth.SOLUTION: Various embodiments of the present technology may provide a system with a bypass line to a foreline of a reaction chamber. The system may include a pump coupled to the foreline. The system may include a pressure-flow controller upstream from the bypass line. The bypass line may be coupled to the foreline at the pump inlet. The bypass line may include a low-flow pathway where the conductance is between 1% and 10% relative to unrestricted flow. The bypass line can comprise a decomposition device configured to decompose the fluid (e.g., gas) in the bypass line.SELECTED DRAWING: Figure 1

A system and method for controlling pressure in a common foreline coupled a processing systems is disclosed herein which reduce variation of pressure in the common foreline. In one example, a processing system is provided that includes a first process chamber, a first pump, a first foreline segment, and a first foreline pressure control system. The first pump is coupled to a first exhaust port of the first process chamber. The processing system further includes a second process chamber, a second pump, a second foreline segment, and a second foreline pressure control system. The second pump coupled to a second exhaust port of the second process chamber. The common foreline is coupled downstream of the first pump and the second pump. The first and second foreline pressure control system is operable to control the pressure in the common foreline independent from operation of the first or second pump.

Various embodiments of the present technology may provide a system having a bypass line to a foreline of a reaction chamber. The system may include a pump coupled to the foreline. The system may include a pressure flow controller upstream of the bypass line. The bypass line may be coupled to the foreline at the pump inlet. The bypass line may include a low flow path with a conductivity of between 1% and 10% relative to unlimited flow. The bypass line may include a decomposition device configured to decompose a fluid (e.g., a gas) in the bypass line.

Semiconductor processing systems and system components for providing regenerative heating to forestage components are described. A system includes a plasma-based processing chamber. The processing chamber includes one or more fluid paths configured to circulate a heat transfer fluid. The system also includes one or more vacuum systems configured to discharge process gases from the process chamber, the one or more vacuum systems including one or more vacuum pumps and a foreline vent. The system includes a forestage regenerator. The forestage regenerator includes a regenerator housing at least partially surrounding the forestage vent, the regenerator housing including a heat transfer fluid input and a heat transfer fluid output, where the heat transfer fluid input is coupled to an output of the processing chamber.

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.