Ion source cleaning in semiconductor processing systems

a technology of ion source and processing system, which is applied in the direction of vacuum evaporation coating, cleaning of hollow articles, coatings, etc., can solve the problems of affecting the performance of the ion source, affecting the ion source region, and affecting the ion source lifetime, so as to prolong the lifetime of the ion implant system and improve the performance. , the effect of improving the performan
US20110259366A1Inactive Publication Date: 2011-10-27ENTEGRIS INC
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
ENTEGRIS INC
Publication Date
2011-10-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth / etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
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Description

FIELD OF THE INVENTION

[0001] The present invention relates to monitoring, control and cleaning of material deposition on components of semiconductor processing systems, in particular to ion implantation systems.DESCRIPTION OF THE RELATED ART

[0002] Ion implantation is used in integrated circuit fabrication to accurately introduce controlled amounts of dopant impurities into semiconductor wafers and is a crucial process in microelectronic / semiconductor manufacturing. In such implantation systems, an ion source ionizes a desired dopant element gas and the ions are extracted from the source in the form of an ion beam of desired energy. Extraction is achieved by applying a high voltage across suitably shaped extraction electrodes, which incorporate apertures for passage of the extracted beam. The ion beam is then directed at the surface of the workpiece, such as a semiconductor wafer, in order to implant the workpiece with the dopant element. The ions of the beam penetrate the surface of t...

Claims

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