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Methods of making semiconductor devices having implanted sidewalls and devices made thereby

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as asymmetrical gate-source junction, differential voltage control capability, etc.

Inactive Publication Date: 2012-08-22
PI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The close nature of these two regions results in poor voltage handling capability
Additionally, angled implants along this axis can produce significant ion channeling, resulting in asymmetric gate-source junctions, especially for SiC that is typically cut off-axis (e.g., at an angle of 2-8 degrees) Substrate

Method used

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  • Methods of making semiconductor devices having implanted sidewalls and devices made thereby
  • Methods of making semiconductor devices having implanted sidewalls and devices made thereby
  • Methods of making semiconductor devices having implanted sidewalls and devices made thereby

Examples

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Embodiment Construction

[0020] For the purpose of interpreting this specification, "or" as used herein means "and / or" unless otherwise specified or the use of "and / or" is clearly inappropriate. As used herein, "a" means "one or more" unless specified otherwise or the use of "one or more" is clearly inappropriate. The terms "comprise", "comprises", "comprising", "include", "includes", and "including" are used interchangeably and are intended is restricting. Moreover, where the term "comprising" is used in the description of one or more embodiments, those skilled in the art should appreciate that, in certain specific instances, the embodiment or embodiments may alternatively Use the language "consisting essentially of" and / or "consisting of" to describe. It should also be appreciated that in certain implementations, the order of steps or commands for performing certain actions is immaterial so long as the teachings remain operable. Also, in some embodiments, two or more steps or actions can be perfo...

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Abstract

Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices are made using selective ion implantation using an implantation mask. The devices have implanted sidewalls formed by scattering of normal incident ions from the implantation mask. Vertical junction field-effect transistors with long channel length are described. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.

Description

[0001] This application claims priority to Provisional U.S. Patent Application No. 61 / 267,524, filed December 8, 2009, the entire contents of which are hereby incorporated by reference. [0002] The section headings used herein are for organizational purposes only and should not be construed as limiting the subject matter described herein in any way. technical field [0003] The present application relates generally to semiconductor devices, and to methods of fabricating the devices. Background technique [0004] Field Effect Transistors (FETs) are a class of transistors commonly used for weak signal amplification, such as for amplifying wireless signals. This device can amplify analog or digital signals. It can also switch DC or act as an oscillator. In a FET, current flows along a semiconductor path called the channel. At one end of the channel, there is an electrode called the source. At the other end of the channel, there is an electrode called the drain. The physic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L21/265
CPCH01L29/1608H01L29/66068H01L29/8083H01L21/047H01L29/1066
Inventor 大卫·C·谢里登安德鲁·里特诺尔
Owner PI