Trichlorosilane rectification system

A technology of trichlorosilane and rectification system, which is applied in the direction of fractionation, halosilane, halide silicon compound, etc., which can solve the problem of affecting the quality of trichlorosilane, increasing the energy consumption of trichlorosilane rectification system and equipment investment and other problems, to achieve the effect of improving the separation effect and operation stability, eliminating the amplification effect, and reducing the processing capacity

Active Publication Date: 2012-08-29
CHINA ENFI ENGINEERING CORPORATION +1
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, with the continuous expansion of polysilicon production scale, the diameter of the rectification tower in the trichlorosilane rectification system is also increasing, and the amplification effect brou

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trichlorosilane rectification system
  • Trichlorosilane rectification system

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0020] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the drawings are exemplary, and are only used to explain the present invention, but should not be understood as limiting the present invention.

[0021] In the description of the present invention, it should be understood that the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, not It indicates or implies that the pointed d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a trichlorosilane rectification system, which comprises a first rectification tower, a condenser, a second rectification tower, a first reboiler, a subcooler and a second reboiler, wherein an inlet of the condenser is connected with the first upper outlet of the first rectification tower, an outlet of the condenser is connected with a first return flow opening of the first rectification tower, a first inlet of the first reboiler is connected with a first lower outlet of the first rectification tower, a first outlet of the first reboiler is connected with a first air return opening of the first rectification tower, a second inlet of the first reboiler is connected with a second upper outlet of the second rectification tower, a second outlet of the first reboiler is connected with a second return flow opening of the second rectification tower, an inlet of the subcooler is connected with a second outlet of the first reboiler, an outlet of the subcooler is connected with a second return flow opening of the second rectification tower, an inlet of the second reboiler is connected with a second lower outlet of the second rectification tower, and an outlet of the second reboiler is connected with a second air return opening of the second rectification tower. The trichlorosilane rectification system according to the embodiment of the invention has the advantages that the produced trichlorosilane quality is high, the energy consumption is low, the equipment investment is low, and the like.

Description

technical field [0001] The invention relates to the technical field of rectification, in particular to a trichlorosilane rectification system. Background technique [0002] Polysilicon is a key raw material for integrated circuits and photovoltaic power generation. As an intermediate product in the production process of polysilicon, trichlorosilane has a direct impact on the quality of polysilicon products. At present, with the continuous expansion of polysilicon production scale, the diameter of the rectification tower in the trichlorosilane rectification system is also increasing, and the amplification effect brought about by the increase of the tower diameter seriously affects the quality of trichlorosilane. And the energy consumption and equipment investment of the trichlorosilane rectification system have been greatly increased. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems existing in the prior art. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B01D3/14C01B33/107
CPCY02P20/10Y02P20/50
Inventor 赵雄严大洲毋克力肖荣晖汤传斌姜利霞杨永亮
Owner CHINA ENFI ENGINEERING CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap