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Trichlorosilane rectification system

A technology of trichlorosilane and rectification system, which is applied in the direction of fractionation, halosilane, halide silicon compound, etc., which can solve the problem of affecting the quality of trichlorosilane, increasing the energy consumption of trichlorosilane rectification system and equipment investment and other problems, to achieve the effect of improving the separation effect and operation stability, eliminating the amplification effect, and reducing the processing capacity

Active Publication Date: 2012-08-29
CHINA ENFI ENGINEERING CORPORATION +1
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Problems solved by technology

At present, with the continuous expansion of polysilicon production scale, the diameter of the rectification tower in the trichlorosilane rectification system is also increasing, and the amplification effect brought about by the increase of the tower diameter seriously affects the quality of trichlorosilane. And greatly increased the energy consumption and equipment investment of the trichlorosilane rectification system

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  • Trichlorosilane rectification system
  • Trichlorosilane rectification system

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Embodiment Construction

[0020] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0021] In describing the present invention, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than Nothing indicating or implying that a referenced device or elem...

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Abstract

The invention discloses a trichlorosilane rectification system, which comprises a first rectification tower, a condenser, a second rectification tower, a first reboiler, a subcooler and a second reboiler, wherein an inlet of the condenser is connected with the first upper outlet of the first rectification tower, an outlet of the condenser is connected with a first return flow opening of the first rectification tower, a first inlet of the first reboiler is connected with a first lower outlet of the first rectification tower, a first outlet of the first reboiler is connected with a first air return opening of the first rectification tower, a second inlet of the first reboiler is connected with a second upper outlet of the second rectification tower, a second outlet of the first reboiler is connected with a second return flow opening of the second rectification tower, an inlet of the subcooler is connected with a second outlet of the first reboiler, an outlet of the subcooler is connected with a second return flow opening of the second rectification tower, an inlet of the second reboiler is connected with a second lower outlet of the second rectification tower, and an outlet of the second reboiler is connected with a second air return opening of the second rectification tower. The trichlorosilane rectification system according to the embodiment of the invention has the advantages that the produced trichlorosilane quality is high, the energy consumption is low, the equipment investment is low, and the like.

Description

technical field [0001] The invention relates to the technical field of rectification, in particular to a trichlorosilane rectification system. Background technique [0002] Polysilicon is a key raw material for integrated circuits and photovoltaic power generation. As an intermediate product in the production process of polysilicon, trichlorosilane has a direct impact on the quality of polysilicon products. At present, with the continuous expansion of polysilicon production scale, the diameter of the rectification tower in the trichlorosilane rectification system is also increasing, and the amplification effect brought about by the increase of the tower diameter seriously affects the quality of trichlorosilane. And the energy consumption and equipment investment of the trichlorosilane rectification system have been greatly increased. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems existing in the prior art. ...

Claims

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Application Information

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IPC IPC(8): B01D3/14C01B33/107
CPCY02P20/10Y02P20/50
Inventor 赵雄严大洲毋克力肖荣晖汤传斌姜利霞杨永亮
Owner CHINA ENFI ENGINEERING CORPORATION
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