Texturing device and method for silicon solar cells

A technology of silicon solar cells and solar cells, which is applied in the direction of chemical instruments and methods, circuits, electrical components, etc., can solve the problems of reducing the surface reflectivity of silicon solar cells, reducing the damage rate of silicon chips, and shortage of water resources, etc., to achieve Effects of improving photoelectric conversion efficiency, reducing reflectivity, and reducing damage rate

Inactive Publication Date: 2012-08-29
SUZHOU UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a silicon solar cell texturing device and method to solve the problems of water resource shortage and environmental pollution when wet chemical etching is used for texturing, and can reduce the damage of silicon wafers rate, reducing the reflectivity of the surface of silicon solar cells

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  • Texturing device and method for silicon solar cells
  • Texturing device and method for silicon solar cells
  • Texturing device and method for silicon solar cells

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Embodiment 1

[0041] As mentioned in the background technology section, wet chemical etching is often used in the industry to texture the silicon solar cells (wet texturing for short), and wet texturing needs to consume a large amount of acid and alkali, so there are The problem of shortage of water resources, and the large amount of chemical waste liquid remaining after wet texturing will become one of the sources of environmental pollution. In addition, since the current silicon wafers are becoming thinner and thinner, the silicon wafers treated with acid and alkali solutions are easily broken, resulting in the scrapping of silicon solar cells. Furthermore, the surface reflectance of the obtained silicon solar cells after wet texturing is relatively high, generally more than 23%, and it is difficult to further reduce the reflectivity. Therefore, the photoelectric conversion efficiency of the silicon solar cells cannot be improved.

[0042] Based on this, the present invention provides a m...

Embodiment 2

[0060] In this embodiment, texturing of monocrystalline silicon solar cells is taken as an example for illustration.

[0061] The single crystal silicon is Czochralski single crystal silicon with n-type (100) crystal plane. The single crystal silicon is placed on the lower electrode in a capacitively coupled plasma device excited by dual radio frequency power sources. The lower electrode can be connected to a water cooling system for cooling, therefore, the lower electrode can also be called a water-cooled substrate holder. Vacuumize the reaction chamber in the plasma device, generally to 5×10 -3 About Pa gets final product, at this moment, lead into SF with the flow rate of 45 sccm by the gas inlet of described plasma device side wall 6 and pass O at a flow rate of 5 sccm 2 , after the gas introduced is stable, adjust the high valve to keep the pressure of the reaction chamber at about 0.75Pa. Then open the upper electrode RF power supply connected to the upper electrode,...

Embodiment 3

[0064] In this embodiment, texturing of monocrystalline silicon solar cells is still taken as an example for illustration.

[0065] The difference from Embodiment 2 is that in this embodiment, the power of the upper electrode RF power supply is set to 500W, and other conditions and steps are the same as in Embodiment 2. Finally, after texturing the monocrystalline silicon solar cells After testing, the reflectance of the textured surface of the silicon wafer obtained is 2% at the wavelength of 800 nm. Compared with Example 2, the reflectance of the surface of the silicon solar cell is further reduced. This is due to: increasing the power of the RF power supply of the upper electrode can make the density of the plasma generated in the reaction chamber larger. Therefore, when other conditions are the same, the surface etching of crystalline silicon is carried out more fully, and the texture effect is improved. Better, so as to reduce the reflectivity of the textured surface of t...

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Abstract

The embodiment of the invention discloses a texturing device and method for silicon solar cells. The method includes the steps as follows: placing the silicon solar cell in a capacitive coupling plasma device excited by a double-RF power supply; introducing reaction gas in the plasma device; and enabling the reaction gas to form a plasma under the excitation of the double-RF power supply; and etching the surface of the silicon solar cell through the plasma under the action of the double-RF power supply, so as to realize texturing of the silicon solar cell. The texturing device and the method for silicon solar cells, provided by the invention, not only can solve the problems of water resource shortage, environmental pollution and the like, existing during the texturing through adopting the wet process chemical etch manner, but also can reduce the breakage rate of silicon chips and the reflectivity on the surfaces of the silicon solar cells.

Description

technical field [0001] The invention relates to the technical field of the photovoltaic industry, and more specifically, to a texturing device and method for silicon solar cells. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new type of energy with broad development prospects in today's energy shortage situation. [0003] The manufacturing process of solar cells includes process steps such as texturing, diffusion junction, peripheral etching, deposition of anti-reflection film, printing electrodes and sintering. In the above process steps, the texturing is mainly to form an uneven structure on the surface of the originally bright battery sheet through physical or chemical reactions, and the formed uneven structure can not only make...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H05H1/24C30B33/12
CPCY02P70/50
Inventor 辛煜邹帅吉亮亮
Owner SUZHOU UNIV
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