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Removing method for residual liquid on back of tellurium-cadmium-mercury liquid phase epitaxial thin film

A technology of liquid phase epitaxy and epitaxial thin film, which is applied in the direction of liquid phase epitaxy layer growth, chemical instruments and methods, crystal growth, etc., and can solve the problems of yield reduction and other problems

Active Publication Date: 2014-11-26
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for removing the residual liquid on the back of the mercury cadmium telluride liquid phase epitaxial film, which solves the problem of lower yield caused by the residual substance stuck on the back of the liquid phase epitaxial film.

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  • Removing method for residual liquid on back of tellurium-cadmium-mercury liquid phase epitaxial thin film
  • Removing method for residual liquid on back of tellurium-cadmium-mercury liquid phase epitaxial thin film

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Embodiment Construction

[0015] See below in conjunction with accompanying drawing to the concrete implementation flow process of the present invention figure 1 To elaborate further:

[0016] 1. The uniform glue mainly plays the role of protecting the surface of the epitaxial film. In this treatment method, the process of evenly gluing with thin glue is adopted twice. The speed is 200 for the first 3 seconds, and 2000 rpm for the next 30 seconds.

[0017] 2. The aqua regia corrosion mainly plays the role of partially crisping and loosening the residual liquid on the back of the epitaxial film and partially removing the residual liquid. Due to the traditional CdZnTe polishing technology, it is easy to throw the epitaxial film of the residual liquid on the back under high pressure, but the residual liquid on the back cannot be removed when the pressure is small. Therefore, aqua regia corrosion is the core process of this invention.

[0018] 3. The mercury cadmium telluride epitaxial layer on the sur...

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Abstract

The invention discloses a removing method for residual liquid on the back of a tellurium-cadmium-mercury liquid phase epitaxial thin film. The removing method is characterized by leading an originally unusable tellurium-cadmium-mercury material with the residual liquid on the back to be normally used by using a chemical corrosion and mechanical polishing method under the condition that the quality of the material is not affected. A device and the method have the advantages that in the whole process, as the surface of the cleaned tellurium-cadmium-mercury epitaxial thin film is always protected by a photoresist, the tellurium-cadmium-mercury epitaxial thin film can not be polluted and oxidized and also can not be scratched due to the contact with hard objects, and the cleanness and the perfect surface of the epitaxial thin film are ensured. The technology has the advantages that the originally unusable epitaxial thin film can be used after being treated, and simultaneously the quality of the epitaxial thin film is also ensured not to be affected, thereby greatly increasing the rate of finished products of tellurium-cadmium-mercury liquid phase epitaxial thin film preparation.

Description

technical field [0001] The invention relates to a semiconductor wafer manufacturing process method, in particular to a process method for removing residual liquid on the backside of vertical liquid phase epitaxial growth of mercury cadmium telluride. technical background [0002] For the infrared mercury cadmium telluride material prepared by the liquid phase epitaxial growth method, a layer of 10-20 micron mercury cadmium telluride epitaxial layer is usually grown on the cadmium zinc telluride substrate. However, in actual growth, no matter vertical immersion growth or horizontal push boat growth, a certain amount of residual liquid will be generated more or less, and the residual liquid problem is also one of the factors that have long affected the use area and quality of HgCdTe materials. . Since the growth residual liquid is amorphous whose hardness is close to that of silicon materials, it is difficult to remove it by ordinary polishing methods, and the residual liquid...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B19/00C30B33/00C30B33/10
Inventor 孙瑞贇杨建荣魏彦锋张传杰孙权志陈倩男张娟陈晓静
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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