Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nonmagnetic Ru film and production method thereof

A non-magnetic, thin-film technology, applied in the field of information storage, can solve the problem that the surface morphology of thin-film Ru film is not clearly stated

Inactive Publication Date: 2014-01-15
KUNMING INST OF PRECIOUS METALS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similarly, the specific preparation process of the film and the surface morphology of the Ru film are not clearly stated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nonmagnetic Ru film and production method thereof
  • Nonmagnetic Ru film and production method thereof
  • Nonmagnetic Ru film and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] Described ruthenium film adopts the method for magnetron sputtering to make, and concrete preparation method comprises the following steps:

[0020] (1) Treatment of the substrate material: the (111) surface of the silicon single wafer is used as the substrate surface, and after alternating ultrasonic cleaning with acetone and ethanol, it is cleaned with ion beam pre-sputtering to remove impurities on the surface of the Si wafer. In ion beam pre-sputter cleaning, the background vacuum is better than 10 -4 Pa, the working pressure of inert gas during sputtering is 1x10 -2 Pa to 4x10 -2 Pa.

[0021] (2) Magnetron sputtering coating: Put the cleaned Si wafer into the magnetron sputtering equipment, and use a self-made Ru target for coating. Sputtering was performed at room temperature with a background vacuum of 10 -3 ~10 -4 Pa, the working pressure of Ar gas is 0.5~3Pa, the sputtering power is 50~300W, and the self-bias voltage is 100~600V.

Embodiment 1

[0024] The ruthenium thin film of the present invention is made through the following steps:

[0025] (1) Treatment of the substrate material: the (111) surface of the silicon single wafer is used as the substrate surface, and after alternating ultrasonic cleaning with acetone and ethanol, it is cleaned with ion beam pre-sputtering to remove impurities on the surface of the Si wafer. Ion beam pre-sputter cleaning with a background vacuum of 6x10 -4 Pa, the working pressure of inert gas during sputtering is 2x10 -2 Pa.

[0026] (2) Magnetron sputtering coating: Put the cleaned Si wafer into the magnetron sputtering equipment, and use a self-made ruthenium target (1#) for coating. The average grain size of the ruthenium target (1#) is 4.3 μm. In the X-ray diffraction analysis, the X-ray diffraction peak intensity ratio of the (002) crystal plane represented by the formula (1) was 42.1%. Sputtering was performed at room temperature with a background vacuum of 3x10 -3 Pa, th...

Embodiment 2

[0028] The difference from Example 1 lies in that during the magnetron sputtering coating process, the working pressure of Ar gas is 0.5Pa, the sputtering power is 300W, and the self-bias voltage is 600V.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a nonmagnetic Ru film and a production method thereof. The nonmagnetic Ru film comprises a substrate 1 and a nonmagnetic Ru film layer 2. The nonmagnetic Ru film layer 2 is made by sputtering a Ru target with a crystal face (002) having more than 30% of X-ray diffraction peak strength ratio shown in a formula (1). In growth in a preferred orientation of the crystal face (002) of the nonmagnetic Ru film layer 2, the X-ray diffraction peak strength ratio of the crystal face (002) shown in the formula (1) is 60%-85%. The nonmagnetic Ru film with the crystal face (002) growing in the preferred orientation, even surface particles and small surface roughness is produced by magnetron sputtering. By using the film as an intermediate layer of a magnetic recording medium, lattice mismatch between the intermediate layer and a magnetic recording layer can be reduced, interface stress can be reduced, crystal face orientation easy for vertical growth is provided for the magnetic recording layer, and finally magnetic property of the vertical magnetic recording medium is improved.

Description

technical field [0001] The invention relates to a Ru nonmagnetic thin film and a preparation method thereof, belonging to the field of information storage. Background technique [0002] With the rapid development of information and computer technology, the study of perpendicular magnetic recording media has attracted widespread attention. The perpendicular magnetic recording medium currently used is mainly composed of three layers with different functions, that is, the soft magnetic underlayer (soft magnetic underlayer, SUL) used to provide the return path of the read / write magnetic field, and reduce the interaction between the lower layer and the magnetic layer. An intermediate layer (non-magnetic intermediate layer, NMIL) that diffuses and regulates the grain morphology in the magnetic layer, and a magnetic recording layer (magnetic recording layer, MRL) for recording information. Among them, NMIL is the key factor controlling the structure and magnetic properties of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16C30B29/02C30B23/02
Inventor 张俊敏谭志龙李艳琼毕珺王传军陈松张昆华管伟明
Owner KUNMING INST OF PRECIOUS METALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com