Method for reducing collapsing or shift of photoresist (PR) mask
A photoresist and mask technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of unqualified photolithography process, product yield decline, and increased photolithography cost, etc., to achieve high yield , enhance adhesion, cost-effective
Active Publication Date: 2012-10-17
WUXI DISI MICROELECTRONICS CO LTD
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[0004] However, such collapse or displacement in the photoresist mask will lead to unqualified photolithography process. If the photolithography is repeated, the cost will be greatly increased; if the next step of the process is continued, the product yield will inevitably decrease.
Moreover, if there is collapse or displacement, the photoresist mask needs to be inspected (such as observation under a microscope), which also increases the cost of photolithography
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[0027] The following introduces some of the multiple possible embodiments of the present invention, which are intended to provide a basic understanding of the present invention, and are not intended to confirm the key or decisive elements of the present invention or limit the scope of protection. It is easy to understand that, according to the technical solution of the present invention, without changing the essential spirit of the present invention, those of ordinary skill in the art can propose other alternative implementation manners. Therefore, the following specific embodiments and drawings are only exemplary descriptions of the technical solutions of the present invention, and should not be regarded as all of the present invention or as a limitation or limitation to the technical solutions of the present invention.
[0028] In the drawings, the thickness of layers and regions are exaggerated for clarity, and shape features such as roundness due to etching are not illustrated...
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Abstract
The invention provides a method for reducing collapsing or shift of a photoresist (PR) mask and belongs to the semiconductor manufacturing lithography technology field. In the method of the invention, the PR mask is used to carry out composition on a silicon substrate and a step of forming an adhesion oxide layer is comprised. A photoetching auxiliary oxide layer is formed on a silicon substrate surface and is used to increase anchoring strength of the PR mask relatively to the silicon substrate. By using the method of the invention, phenomenon of the collapsing, the shift and the like of the PR mask can be substantially reduced. The method is simple and cost is low. A lithography method which adopts the method of the invention has a high success rate. An integrated circuit prepared by using the method has a high yield.
Description
Technical field [0001] The invention belongs to the technical field of lithography in semiconductor manufacturing, and relates to a method for reducing the collapse or displacement of a photoresist (Photoresist, PR) mask. Background technique [0002] Photolithography technology is widely used in the manufacture of integrated circuits (IC). During the photolithography process, the pattern in the mask can be transferred to the photoresist coating coated on the surface of the semiconductor substrate to form a photoresist A mask, through which the photoresist mask can be used to pattern the surface layer of the semiconductor substrate. Generally, the photolithography process is repeatedly used in the semiconductor manufacturing process. For example, in the previous process, it is often necessary to perform photolithography on the surface of the silicon substrate. [0003] With the continuous reduction of the feature size of integrated circuits, the photolithography technology has als...
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IPC IPC(8): H01L21/033
Inventor 陈亚威简志宏
Owner WUXI DISI MICROELECTRONICS CO LTD