Gas transmission pipeline and silica deposition device

Abstract

The invention discloses a gas transmission pipeline and silica deposition device, and relates to the field of integrated circuit manufacturing. According to an embodiment of the invention, an air inlet pipeline is connected to a transmission pipeline is connected with, and a third valve is used to control on-off of the air outlet pipeline; such that during cleaning, a fourth valve can be closed, and a third valve is opened; residual steam and air for cleaning are excluded through the added air outlet pipeline; as the fourth valve is closed, the residual air does not leak or cause influence on other lines or devices connected to the transmission pipeline; besides, during deposition of a silica thin film, a fifth valve can be opened for silicon tapping while cleaning of the pipeline, so as to improve production efficiency.

Description

technical field [0001] The invention relates to integrated circuit manufacturing technology, in particular to a gas transmission pipeline and a silicon dioxide deposition device. Background technique [0002] In the manufacturing process of integrated circuits, due to the lateral diffusion of impurities during source and drain injection, the short channel effect will be generated, which will change the turn-on voltage of the MOS transistor, and the high-energy ion implantation will damage the polycrystalline side wall. Therefore, shallow junction (LDD) injection and spacer isolation (SPACER) layer protection are often used to reduce the impact of short channel effects and damage to polycrystalline sidewalls during integrated circuit manufacturing. [0003] In the process of manufacturing, the gas used to make the side wall isolation layer is orthoethyl silicate (TEOS), that is, Si(OC 2 h 5 ) 4 , also known as tetraethoxysilane. The silicon dioxide thin film deposited by ...

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Problems solved by technology

[0008] The current method of removing residual steam is as follows: figure 1 As shown, when silicon dioxide thin film deposition is carried out, the first valve V1 and the fourth valve V4 are opened, the second valve V2 and the fifth valve V5 are closed, so that tetraethyl silicate vapor enters the furnace tube, and after the deposition is completed, It is necessary to close the first valve V1 and the fifth valve V5, open the second valve V2 and the fourth valve V4, and use nitrogen to clean the transmission pipeline to clean up the residual steam in the transmission pipeline, and this method is used for cleaning. When the residual steam enters the furnace tube, it is easy to cause product abnormalities, and the fifth valve V5 can only be opened after cleaning, so that the processed silicon wafers are released from the furnace, reducing the utilization rate and production capacity of the machine.

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