High voltage terminal

A terminal, high-voltage technology, applied in electrical components, circuits, semiconductor devices, etc., to save the number of lithography, shorten the processing cycle, and reduce costs

Inactive Publication Date: 2012-10-24
李思敏
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Terminal extensions using junctions, or ITE, can be used with the narrow

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High voltage terminal
  • High voltage terminal
  • High voltage terminal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The invention will be described in detail below by means of preferred embodiments with reference to the accompanying drawings.

[0016] Among the figure: 1. the aluminum field plate that is connected with the grooved grid region (the prior art is the main junction of the base area): 11. the aluminum field plate that is connected with the first field limiting ring: 12. the second field plate Aluminum field plates connected by rings: 2. P-type base main junction: 21. The first P-type field limiting ring of the prior art high-voltage terminal: 21. The second P-type of the prior art high-voltage terminal Field limiting ring: 4. Silicon substrate: 41. Lower layer of N+ type silicon substrate: 42. Upper layer of N-type silicon substrate: 5. Silicon groove of P+ type groove gate area: 51. The first P+ type groove shape Silicon groove of the field limiting ring: 52. Silicon groove of the second P+ type grooved field limiting ring: 6. P+ type grooved gate area: 61. The first P+ ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a high voltage terminal. A heavy doping P+ type groove-shaped field limiting ring is arranged on the periphery of an active area of a gate associated transistor of a groove-shaped gate polycrystalline silicon structure, the depth of a groove is in a range from 1micrometers to 6 micrometers, a heavy doping N+ type polycrystalline silicon annular field plate is arranged above the field limiting ring, the upper surface of the polycrystalline silicon field plate is connected with a metal layer AL, and the metal layer AL is connected with the bottom surface of the groove of the P+ type groove-shaped field limiting ring. The high voltage terminal has the advantages that the high voltage terminal is matched with a transistor core process of the gate associated transistor of the groove-shaped gate polycrystalline silicon structure, materials are saved, photoetching times are reduced, the cost is lowered, and the processing cycle is shortened.

Description

technical field [0001] The invention relates to a high-voltage terminal, which belongs to the technical field of silicon semiconductor power devices. Background technique [0002] Tie-gate transistors with groove gate polysilicon structure are a new type of high-voltage power devices. High-voltage power devices are generally terminated using field-limiting rings, field plates, and junction termination extensions (ITE). The college textbook "Power MOSFET and High Voltage Integrated Circuit" (Chen Xingbi Southeast University Press, May 1990) PP 86-120 has a detailed introduction to this. [0003] figure 1 is a structural schematic diagram of a field-limited loop terminal in the prior art, figure 2 It is a structural schematic diagram of a terminal combined with a field plate and a field limiting ring in the prior art. The lower layer 41 of the silicon substrate 4 is N+ type silicon, and the upper layer 42 is N − type silicon. The main base junction 2 and the field limiti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/06H01L29/40H01L29/78
Inventor 李思敏
Owner 李思敏
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap