Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MOCVD reactor

A reactor and protection plate technology, applied in the field of metal organic chemical vapor deposition reactors, can solve problems such as affecting crystal growth, quartz corrosion, difficult processing, etc., and achieve the effects of improving growth stability, prolonging replacement cycle, and improving production efficiency

Active Publication Date: 2014-01-01
广东昭信集团股份有限公司
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The protective plates including the prior art solutions of the above two applications are all made of quartz, which is not easy to process and is fragile; the quartz protective plate affects the continuity and stability of crystal growth in the process of repeated cleaning and utilization. It is easy to cause corrosion to the quartz. After the crystal grows for a round, the protective plate will adhere to the sundries of the crystal growth by-products. If the adhesion is not strong, it will fall into the reaction furnace and affect the crystal growth.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOCVD reactor
  • MOCVD reactor
  • MOCVD reactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] A Metal Organic Chemical Vapor Deposition (MOCVD) reactor provided by the present invention will be described in detail below with reference to the accompanying drawings and specific examples.

[0030] In the following description, various aspects of the present invention will be described. However, those skilled in the art can implement the present invention by using only some or all of the structures or processes of the present invention. For clarity of explanation, specific numbers, arrangements and sequences are set forth, but it will be apparent that the invention may be practiced without these specific details. In other instances, well-known features have not been described in detail in order not to obscure the invention.

[0031] In general, the present invention belongs to the technical improvement of MOCVD reactors, and proposes a new improvement scheme aiming at the pollution problem of the protective plate of the reactor of MOCVD equipment. In the following ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides an MOCVD reactor, including a lid, ceilings, a deposition area and a susceptor, wherein the ceilings are under the lid, the susceptor is under the ceilings, a purge gas pipeline is arranged between the lid and the ceilings, and a pipeline extending from the above of the lid and transmitting growth gas is arranged between the ceilings and the susceptor. The MOCVD reactor is characterized in that one or more purge holes are arranged in the vertical direction of the ceilings.

Description

technical field [0001] The present invention relates to a vapor deposition technique, more specifically, the present invention relates to a metal organic chemical vapor deposition (MOCVD) reactor. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD) uses metal-organic compounds as source materials, and uses gas-phase reactants, or precursors, organic metals of Group III and NH3 of Group V, to react on the surface of the substrate substrate and transfer to the substrate. Solid deposits on the surface of the substrate. [0003] MOCVD has been widely concerned about the rise of LEDs. In the growth of blue LED chips, MOCVD reaction systems are generally used as growth tools. In the case of LEDs, the LED chip consists of a multi-layered architecture of different semiconductor materials placed on a circular chip loaded into a metal-organic chemical vapor deposition system. MOCVD is easy to control the coating composition and crystal phase quality, and ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/455
Inventor 楼刚
Owner 广东昭信集团股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com