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semiconductor memory

A semiconductor and memory technology, which is applied in the field of semiconductor memory, can solve the problems that cannot meet the application of new EEPROM memory, and achieve the effects of integration, reasonable layout, and size reduction

Active Publication Date: 2017-08-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing connection method can no longer meet the application of the new EEPROM memory

Method used

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Embodiment Construction

[0024] As described in the background art, with the continuous advancement of technology, the requirements for EEPROM memory are getting higher and higher, and it is also more and more hopeful to provide a new type of memory that is smaller and more durable. However, when the storage cell structure of a new type of memory changes, the corresponding peripheral circuits also need to be changed. In other words, the existing way of connecting peripheral circuits and word lines can no longer meet the requirements of the new EEPROM memory.

[0025] The technical solution of the present invention has the characteristics of more miniaturization and more durability, and the connection mode of the word lines between the memory cell arrays is adapted to the structure of the memory cells, so as to meet the requirements of various operations.

[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the pr...

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Abstract

A semiconductor memory comprises at least two memory unit arrays and a plurality of word line connection devices. Sources and drains of memory units in the same column of each memory unit array are sequentially connected through first metal layers, word lines of the memory units in the same row and control grids of the memory units in the same row are respectively connected together through second metal layers, active regions of the memory units are connected to the first metal layers through contact holes filled with conductive materials, the contact holes filled with conductive materials are in intersection arrangement in the column and row directions of the memory unit arrays, the word lines of the memory unit arrays are equal, and the word lines in the same row of the memory unit arrays are electrically connected through the word line connection devices. By the semiconductor memory, device size can be effectively reduced, and the semiconductor memory is more durable. In addition, the word line connection devices are simple in structure and structurally adaptive to the memory units.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor memory. Background technique [0002] Nonvolatile semiconductor memories include read only memory (ROM), programmable read only memory (PROM), erasable programmable read only memory (EPROM), electrically erasable programmable read only memory (EEPROM), and the like. [0003] The erasing of EEPROM does not require the help of other equipment. It uses electronic signals to modify its content, and the minimum modification unit is byte (Byte), so it is not necessary to wash all the data. Write, completely get rid of the shackles of EPROM erasing device and programmer. Therefore, semiconductor EEPROM memories are used more and more. [0004] With the wide application of EEPROM, the further miniaturization of electronic equipment and the high requirements for the performance of electronic equipment, it is increasingly desirable to provide more compact and durab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
Inventor 胡剑杨光军张春栋
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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