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Plasma reactor

A technology of plasma reactors and reaction chambers, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of reduced yield and poor uniformity, and achieve the effect of ensuring effectiveness

Active Publication Date: 2012-11-21
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the semiconductor process part is circular, the area of ​​the outer ring is larger, and the poor uniformity of each process link in the edge part will lead to a significant drop in yield

Method used

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  • Plasma reactor
  • Plasma reactor

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Embodiment Construction

[0022] The present invention will be further elaborated below by describing a preferred specific embodiment in detail in conjunction with the accompanying drawings.

[0023] A plasma reactor, comprising a reaction chamber, a mounting base in the reaction chamber, including an electrode connected to the first radio frequency generator in the mounting base, an electrostatic chuck is fixed above the electrode to place the substrate to be processed The electrostatic chuck includes embedded electrodes, which are arranged on the edge of the electrostatic chuck and connected to the second external radio frequency generator through wires, and the wires pass through the electrodes below the electrostatic chuck.

[0024] One of embodiment:

[0025] Such as figure 1 As shown, the buried electrode 1 is set on the edge of the electrostatic chuck and connected to the second external radio frequency generator through a wire. The wire passes through the lower electrode in the base under the ...

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Abstract

The invention discloses a plasma reactor which comprises a reaction cavity. An installing base is arranged in the reaction cavity, an electrode is arranged in the installing base and connected with a first radio frequency generator, and a static sucker is fixed above the electrode and used for placing a substrate to be processed. The static sucker comprises an embedded electrode, the embedded electrode is arranged at the edge of the static sucker and connected with an external second radio frequency generator through an electric wire, and the electric wire penetrates through the electrode below the static sucker. The plasma reactor can compensate etching / deposit rate of the edge of the static sucker, and effectiveness of the static sucker is guaranteed.

Description

technical field [0001] The invention relates to an electrostatic chuck, in particular to an electrostatic chuck equipped with embedded radio frequency electrodes. Background technique [0002] The edge effect of semiconductor process parts is a problem that plagues the semiconductor industry. The so-called edge effect of semiconductor process parts means that in the process of plasma processing, since the plasma is controlled by the electric field, the field strength at the edge of the upper and lower poles will be affected by the outside world, and there will always be a part of the electric field line bent, resulting in a partial field strength at the edge of the electric field. Inhomogeneity, which in turn leads to uneven plasma concentration in this part. In this case, there is also a circle of uneven processing around the produced semiconductor process piece. [0003] Since the semiconductor process part is circular, the area of ​​the outer ring is larger, and the poo...

Claims

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Application Information

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IPC IPC(8): H01J37/20
Inventor 欧阳亮陶铮倪图强松尾裕史尹志尧
Owner ADVANCED MICRO FAB EQUIP INC CHINA