Check patentability & draft patents in minutes with Patsnap Eureka AI!

Apparatus

A kind of equipment and low-pressure chamber technology, applied in the field of atomic layer deposition equipment, can solve problems such as complex substrate loading devices, achieve the effects of reducing surface area, reducing quantity, and improving substrate processing quality

Active Publication Date: 2012-11-28
青岛四方思锐智能技术有限公司
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In prior art equipment comprising multiple parallel coating chambers there are problems associated with complex substrate loading arrangements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus
  • Apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] attached figure 1 An embodiment of an apparatus 1 according to the invention is shown for carrying out atomic layer deposition. The plant comprises a main body with a starting material input system 5 , a control system 4 and four low pressure chambers 2 . In other words, according to the present invention, the same atomic layer deposition apparatus is provided with several low-pressure chambers 2 . The device 1 can have two or more low-pressure chambers 2 . exist figure 1 In the above, the low-pressure chambers 2 are placed in the equipment 1 and stacked vertically, but alternatively, the low-pressure chambers 2 can also be arranged side by side in the equipment along the horizontal direction. Furthermore, if the installation comprises a large number of low-pressure chambers 2, they can be arranged, for example, in a matrix, wherein the low-pressure chambers 2 are both juxtaposed horizontally and stacked vertically. These low-pressure chambers 2 can be of any shape ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an apparatus (1) for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate (11) to alternate starting material surface reactions, the apparatus comprising two or more low-pressure chambers (2), two or more separate reaction chambers (8, 12) arranged to be placed inside the low-pressure chambers (2), and at least one starting material feed system (5) common to two or more low-pressure chambers (2) for carrying out atomic layer deposition. According to the invention, the apparatus comprises at least one loading device (6, 16) arranged to load and unload substrates (11) to / from the reaction chamber (8, 12) and further to load and unload the reaction chambers (8, 12) to / from the low-pressure chambers (2).

Description

technical field [0001] The invention relates to an atomic layer deposition apparatus, in particular an apparatus according to the preamble of claim 1, for performing atomic layer deposition on a substrate surface by alternating surface reactions of starting materials on the substrate surface , the apparatus comprising: two or more low-pressure chambers; two or more independently movable reaction chambers arranged to be placed inside the low-pressure chambers; and at least one starting material input system consisting of Two or more low-pressure chambers are used for atomic layer deposition. Background technique [0002] In the prior art atomic layer deposition equipment, by alternately inputting two or more gaseous starting materials into the coating chamber, the substrate to be treated undergoes alternating saturated surface reactions of the starting materials, thereby coating the substrate bottom or doping porous substrates. The coating chamber can be flushed with flushi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/54H01L21/00
CPCC23C16/54H01L21/67207H01L21/6719C23C16/45546C23C16/45544
Inventor P·索伊尼宁J·斯卡普
Owner 青岛四方思锐智能技术有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More