Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Float-zone monocrystalline silicon production process and float-zone thermal field

A single crystal silicon and thermal field technology, which is applied in the directions of single crystal growth, self-regional melting method, crystal growth, etc., can solve the problems of inability to pull large-diameter zone-melted single crystal silicon and low output

Inactive Publication Date: 2012-12-05
JINGYUNTONG TECH CO LTD
View PDF14 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Therefore, using this heating coil, the feeding material is light, the output is low, and it is impossible to pull large-diameter zone melting single crystal silicon.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Float-zone monocrystalline silicon production process and float-zone thermal field
  • Float-zone monocrystalline silicon production process and float-zone thermal field
  • Float-zone monocrystalline silicon production process and float-zone thermal field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The embodiment of the present invention provides a zone-melting monocrystalline silicon production process and a zone-melting heat field, which expands the inner diameter of the heating coil so that the inner diameter of the heating coil is greater than or equal to 30mm, and at the same time, at least one is set outside the upper slope of the heating coil Step platform, so as to change the effect of the magnetic force lines, so that the polysilicon material with a larger diameter can be completely melted, and then the zone-melted single crystal silicon with a larger diameter can be drawn.

[0037] Such as figure 2 As shown, the zone melting heat field provided by the embodiment of the present invention includes: a preheating ring 201, a heating coil 202, and a heat preservation cover 203, wherein:

[0038] At least one stepped platform is provided outside the upper slope 2021 of the heating coil 202, and the inner diameter r of the heating coil is greater than or equal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
Login to View More

Abstract

The invention discloses a float-zone monocrystalline silicon production process and a float-zone thermal field and relates to a monocrystalline silicon production technique. Since the inner diameter of a heating coil is increased and is enabled to be more than or equal to 30mm and at least one stage of step platform is arranged outside the upper inclined surface of the heating coil, to change the effect of a magnetic force line, the float-zone thermal field provided by the embodiment of the invention has the advantages that the polycrystalline silicon with larger diameter can be thoroughly melted and the drawing of zone-melt monocrystalline silicon with larger diameter can be realized.

Description

technical field [0001] The invention relates to single crystal silicon production technology, in particular to a zone melting single crystal silicon production process and a zone melting heat field. Background technique [0002] At present, the zone melting heat field for the production of zone melting single crystal silicon usually adopts a small inner diameter flat plate duckbill coil. The cross-sectional view of the heating coil is shown in figure 1 As shown, including the upper slope 101, the lower slope 102 and the water pipe 103, the heating coil can melt a polycrystalline rod with a maximum diameter of about 80mm, and the maximum diameter of the grown monocrystalline silicon is 105mm. [0003] Therefore, using the heating coil, the feeding material is light, the output is low, and the drawing of large-diameter zone-melting single crystal silicon cannot be realized. Contents of the invention [0004] Embodiments of the present invention provide a zone-melting single...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/20C30B29/06
Inventor 阮光玉冷先锋王楠
Owner JINGYUNTONG TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com