Drying device and drying method for high-purity silicon materials

Abstract

The invention discloses a drying device for high-purity silicon materials. The drying device comprises a case. The case is a sealed case with a sealing door, multiple layers of drying plate supports are arranged in an inner cavity of the case, toothed rails are arranged on each layer of drying plate supports, and drying plates are disposed on the toothed rails; two vacuum breaking ports are respectively arranged on side walls of the case; the case is communicated with a vacuumizing device via a vacuumizing port on a side wall, is communicated with a vacuum gauge via a vacuum verifying hole on the side wall and is communicated with a medium circulating heating device via a heat-conduction medium inlet and a heat-conduction medium outlet on the side wall simultaneously; and the vacuumizing device and the medium circulating heating device are respectively connected with a control device via signals. The invention further discloses a drying method for the high-purity silicon materials. The drying method includes placing the to-be-dried high-purity silicon materials in the sealed case; vacuumizing the case by a vacuum pump; heating to dry the high-purity silicon materials; detecting a drying effect in real time; and heating the high-purity silicon materials until technical requirements are met. The drying device and the drying method have the advantages of simple structure and high drying efficiency.

Description

technical field [0001] The invention relates to the technical field of solar silicon material drying, and relates to a high-purity silicon material drying device, and also relates to a method for using the device to dry high-purity silicon material. Background technique [0002] At present, the commonly used high-purity polysilicon materials mainly include water-explosive block materials, large block materials, granular polycrystalline materials, fragment materials, edge leather materials, etc., and are dried by constant temperature blasting after cleaning. During the drying process, due to the variety of polysilicon materials and the uneven size, the ordinary drying oven takes up to 30-60 minutes to dry, and the drying temperature is 180-200 ° C. The drying process is slow and consumes a lot of energy. The efficiency is low; moreover, during the drying process, the surface of the material will be polluted, the purity of the material will be reduced, and the quality of the m...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a high-purity silicon material drying device, which solves the technical problems of uneven drying of materials, long drying time and low efficiency in the prior art.

[0005] Another object of the present invention is to provide a method for drying high-purity silicon materials using the above-mentioned device, which solves the problem of easily polluting the surface of the material, reducing the purity of the material, and affecting the quality of the material during the drying process of the prior art; It takes a long time and seriously affects the production capacity

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