Plasma treatment system

Abstract

The invention discloses a plasma treatment system, comprising a plasma reaction cavity. A controller controls a plasma treatment process inside the plasma reaction cavity; and a vacuum air pump discharges gas out of the plasma reaction cavity through an air discharging pipeline. The plasma treatment system further comprises a gas collecting pipeline; the gas collecting pipeline is connected to the air discharging pipeline and is used for collecting gas in the gas collecting pipeline; a sampling plasma generating device is used for ionizing gas passing through the gas collecting pipeline, so as to form sampling plasma; and the controller detects sampling plasma signals formed in the gas collecting pipeline and controls a plasma treatment process according to the sampling plasma signals. According to the plasma treatment system provided by the invention, the influence of input fluctuation of a radio frequency power source can be avoided, and the reliability of terminal detection can be ensured.

Description

technical field [0001] The invention relates to an end detection device of a mechanism capable of generating plasma, in particular to a plasma processing system. Background technique [0002] In the prior art, a high-frequency radio frequency electric field is applied in a plasma reaction chamber to make the reaction gas in the plasma reaction chamber form plasma, and the substrate or wafer in the plasma reaction chamber is processed with high precision by using the plasma. When the processing is carried out to a certain extent, for example, when the etched target material is etched through, it is necessary to judge whether to stop the current processing step and enter the next processing step. The judgment of whether the etching reaches the end point is usually obtained by using an observation window on the side wall of the plasma reaction chamber to sample the plasma luminescence spectrum and corresponding intensity in the plasma reaction chamber, and analyzing the sampled...

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Problems solved by technology

On the other hand, the endpoint detection standard is very sensitive to changes in the plasma emission intensity, and a small fluctuation in the RF power input may cause a false detection of an etching point, thus, the reliability of this endpoint detection method is greatly reduced , in order to improve the reliability, these ripples must be filtered out, but in doing so, the effective information will be filtered out and the corresponding accuracy will be reduced.

Therefore, in the prior art, most of the collected sampling optical signals come from the plasma in the reaction chamber, therefore, it is impossible to obtain reliable and high-precision detection of the processing end point.

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