Method of manufacturing nitride semiconductor device

A technology of nitride semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, transistor and other directions, can solve problems such as unavoidable deterioration and insufficient reduction of leakage current, and achieve the effect of avoiding deterioration

Inactive Publication Date: 2012-12-19
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the deterioration of the crystal quality such as the generation of nitrogen vacancies cannot be avoided, and the leakage current cannot be sufficiently reduced.

Method used

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  • Method of manufacturing nitride semiconductor device
  • Method of manufacturing nitride semiconductor device
  • Method of manufacturing nitride semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0028] figure 1 It is a cross-sectional view showing the nitride semiconductor device according to Embodiment 1 of the present invention. An AlN high-resistance buffer layer 2 having a layer thickness of 300 nm is provided on a SiC substrate 1 . A GaN electron transit layer 3 with a layer thickness of 1 μm is provided on the AlN high-resistance buffer layer 2 . Al on GaN electron transit layer 3 with a layer thickness of 25nm 0.2 Ga 0.8 N donating electron layer 4. in Al 0.2 Ga 0.8 A gate electrode 5 , a source electrode 6 and a drain electrode 7 are arranged on the N electron-donating layer 4 . In the AlN high resistance buffer layer 2, the carbon concentration is controlled to be 10 18 cm －3 above, with a ratio of GaN electron transit layer 3 and Al 0.2 Ga 0.8 The resistance value of the N-donating sublayer 4 is high.

[0029] Next, a method of manufacturing the nitride semiconductor device according to Embodiment 1 of the present invention will be described. As ...

Embodiment approach 2

[0036] In Embodiment 2, when forming the AlN high-resistance buffer layer 2, UDMHy and NH 3 . The manufacturing method other than this is the same as that of Embodiment 1.

[0037] figure 2 is NH representing the carbon concentration 3 / UDMHy provides a plot of the molar ratio dependence. It can be seen from the figure that by making NH 3 The supply molar ratio to UDMHy is 30 or less, and the carbon concentration can be controlled to 10 18 cm －3 Above, without changing the growth temperature and growth pressure that affect the crystal quality. As a result, it can be obtained, for example, with 100Ωcm~1×10 7 The AlN high-resistance buffer layer 2 with the required resistivity of Ωcm, so the structure design becomes easy. Moreover, by changing the NH in the crystal growth 3 The / UDMHy supply molar ratio can also change the carbon concentration in the film thickness direction.

Embodiment approach 3

[0039] image 3 It is a cross-sectional view showing a nitride semiconductor device according to Embodiment 3 of the present invention. An AlN high-resistance buffer layer 2 having a layer thickness of 300 nm is provided on a SiC substrate 1 . A GaN high resistance buffer layer 8 with a layer thickness of 0.5 μm is provided on the AlN high resistance buffer layer 2 . GaN electron transit layer 3 having a layer thickness of 0.5 μm is provided on GaN high-resistance buffer layer 8 . Al on GaN electron transit layer 3 with a layer thickness of 25nm 0.2 Ga 0.8 N donating electron layer 4. in Al 0.2 Ga 0.8 A gate electrode 5 , a source electrode 6 and a drain electrode 7 are arranged on the N electron-donating layer 4 . In the AlN high-resistance buffer layer 2 and the GaN high-resistance buffer layer 8, the carbon concentration is controlled to be 10 18 cm －3 above, with a ratio of GaN electron transit layer 3 and Al 0.2 Ga 0.8 The resistance value of the N-donating sub...

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Abstract

The invention aims at obtaining a method of manufacturing a nitride semiconductor device which can prevent the quality of wafers of high-resistance buffer layer from deteriorating. The method comprises that an AlN high-resistance buffer layer (2) is formed, which is made of a nitride semiconductor having carbon concentration controlled to 1018cm-3 or above on a semiconductor substrate by an MOCVD method using an organic metal compound as a group III raw material and using a hydrazine derivative as a group V raw material; and on the AlN high-resistance buffer layer (2), an electron transit GaN layer (3) is and an Al0.2Ga0.8N electron supply layer (4) are formed.

Description

technical field [0001] The present invention relates to a method of manufacturing a nitride semiconductor device in which a high-resistance buffer layer made of a nitride semiconductor is formed on a substrate. Background technique [0002] In a field effect transistor (FET: Field Effect Transistor) using a nitride semiconductor, the buffer layer is made high in resistance in order to reduce a leakage current in the buffer layer or to increase a breakdown voltage. A method of achieving high resistance by doping a nitride semiconductor with carbon as an impurity has been proposed (for example, refer to Patent Documents 1 to 3). In the MOCVD method, a method of doping carbon with a methyl group or an ethyl group of a Group III raw material is used by lowering the growth temperature, growth pressure, V / III ratio, and the like. [0003] [Prior art literature] [0004] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2000-68498 [0006] [Patent Doc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335
CPCH01L29/7787H01L21/02458H01L21/0262H01L29/2003H01L29/1075H01L21/02505H01L21/0254H01L21/02378H01L21/18H01L21/205H01L29/778
Inventor 大野彰仁
Owner MITSUBISHI ELECTRIC CORP
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