Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device. The semiconductor device comprises a substrate, an insulated isolation layer formed on the substrate and first and second active region layers formed in the insulated isolation layer, and is characterized in that the carrier mobility rate of the first active region layer and / or the second active region layer is higher than that of the substrate. According to the semiconductor and the manufacturing method thereof, active regions different from substrate materials are used, and the carrier mobility rate of a channel region is increased, so that the response speed of the device is greatly increased and the performance of the device is enhanced. In addition, the manufacturing method is different from the conventional STI (Shallow Trench Isolation) manufacturing process, STI is formed at first and then the active regions are formed by filling, so that the problem of holes in the STI is avoided and the reliability of the device is improved.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a semiconductor device with a high-mobility material surrounded by STI as a channel and a manufacturing method thereof. Background technique [0002] As the size of semiconductor devices continues to shrink, enhancing the mobility of channel carriers has become a very important technology. In the design of the substrate stress layer, different materials have different characteristics, such as lattice constant, dielectric constant, band gap, especially carrier mobility, etc., as shown in Table 1 below. [0003] Table 1 [0004] [0005] It can be seen from Table 1 that among the above-mentioned possible substrate materials, Ge has the highest hole mobility and relatively high electron mobility, so it can make the PMOS performance and NMOS performance better as the channel region. , using Ge as the substrate of semiconductor devices will greatly enha...

AI Technical Summary

Problems solved by technology

As the size of the device shrinks, the aspect ratio of the corresponding STI is also increasing, and the step coverage of the oxide insulating film is getting worse, that is, the edge oxide insulating film may be bonded earlier on the narrower trench. However, the trench below it has not been completely filled, which causes holes or voids in the STI, which reduces the insulation performance of the device and deteriorates the reliability.

[0008] All in all, the current semiconductor devices with Si channels surrounded by STI have low performance and poor reliability. It is necessary to further improve the carrier mobility in the channel region and eliminate STI holes to improve the electrical performance and reliability of semiconductor devices.