Array substrate and manufacture method thereof

Abstract

The invention discloses an array substrate and a manufacture method thereof. The array substrate is used to improve homogeneity of picture chromaticity of a display device and picture quality. The array substrate comprises a substrate, a grid electrode, a source electrode, a drain electrode, a semi-conductor layer and a first insulation layer, wherein the source electrode and the drain electrode are in different areas on the substrate from the grid electrode, and vertical projections on the substrate of the source electrode and the drain electrode are provided with overlapping areas, the semi-conductor layer is formed between the source electrode and the drain electrode, and aprojection of the semi-conductor layer on the substrate is overlapped with the vertical projections on the substrate of the source electrode and the drain electrode. The first insulation layer is formed below an upper grid electrode of the substrate and covers the source electrode or the drain electrode. The array substrate further comprises a pixel electrode, a grid electrode line and a data line.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a manufacturing method thereof. Background technique [0002] In the field of display technology, flat panel display devices, such as Thin Film Transistor Liquid Crystal Display (TFT-LCD) and Organic Light Emitting Display (Organic Light Emitting Display), because of their lightness, thinness, low power consumption, and high brightness, As well as high image quality and other advantages, it occupies an important position in the field of flat panel display. [0003] Firstly, the aperture ratio is an important index for determining the high brightness of the flat panel display device, and the higher the aperture ratio, the higher the efficiency of light passing through. Existing methods for increasing the pixel aperture ratio include: using more advanced micro-processing technology, reducing the area occupied by the wiring part and TFT of each pixel...

AI Technical Summary

Problems solved by technology

If a display panel requires multiple exposures to form all the TFTs, the TFTs formed by different exposure processes have different alignment errors between the gate 11 and the source and drain, so that the corresponding image of the TFTs on the entire array substrate The chromaticity is uneven, and the image quality formed is poor

[0006] Moreover, in the existing TFT design method, since the gate has a certain thickness, a certain step is formed between the gate and the glass substrate (the height of the step is the thickness of the gate), so the thickness of the gate insulating layer cannot be too thin. Thinness will lead to the breakage of the gate insulating layer. A thick gate insulating layer requires a large switching current of the TFT, which is not conducive to improving the electrical characteristics of the TFT.

[0007] In the existing TFT structure, the source and drain are designed on the same plane, and there is no overlapping area in the vertical direction, resulting in a large TFT area and a low aperture ratio of the pixel, and the existing TFT design method, the gate and source Large alignment errors between the drains will lead to uneven chromaticity of the image on the display device and poor image quality

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