Preparation method of interdigitated back-contact battery based on N-type substrate

A substrate, N-type technology, applied in the field of solar cells, can solve the problems of difficult to control the uniformity of diffusion, decrease in the lifetime of the minority carrier of the silicon wafer, and great influence on the silicon wafer, and achieve the effects of good control, less pollution and uniform distribution.

Inactive Publication Date: 2012-12-26
ZHEJIANG JINKO SOLAR CO LTD
View PDF5 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are several problems with this method: (1) and gaseous P 2 o 5 different, B 2 o 3 It has a high boiling point and is still liquid at high temperature, so it is difficult to evenly cover the surface of the silicon wafer, so the uniformity of dif...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of interdigitated back-contact battery based on N-type substrate
  • Preparation method of interdigitated back-contact battery based on N-type substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The present invention proposes a method for preparing an N-type IBC high-efficiency solar cell based on laser doping to prepare a back surface PN junction. The following takes an N-type monocrystalline silicon solar cell as an example, and the preparation steps are as follows:

[0035] ⑴Use a mixed aqueous solution of sodium hydroxide, IPA and texturing additives for N-type silicon wafers (wherein: sodium hydroxide mass fraction is 1.3%, IPA volume fraction is 0.3%, texturing additive volume fraction is 0.03%) for surface treatment , Make a uniform size pyramid-shaped suede structure; then use PECVD (plasma enhanced chemical vapor deposition) to prepare SiNx dielectric films on the front and back surfaces.

[0036] ⑵Spin-coating a phosphoric acid-ethanol mixed aqueous solution (phosphoric acid:ethanol:water=24:9:10) on the back surface of the silicon wafer; then use laser to perform partial N on the back surface of the silicon wafer + Heavy doping, using Paladin UV ultraviole...

Embodiment 2

[0043] (1) Carry out surface texture treatment on the crystalline silicon wafer, and prepare SiNx films on the front and back surfaces;

[0044] (2) On the back surface of the crystalline silicon coated with phosphoric acid, the partial N is prepared by scanning the AVIA green light with a wavelength of 532nm. + Heavy doped structure, clean and blow dry;

[0045] (3) Partial P is prepared on the back surface of crystalline silicon coated with boric acid by using AVIA green light scanning method with a wavelength of 532nm + Heavy doped structure, clean and blow dry;

[0046] ⑷Prepare N on the front surface of crystalline silicon coated with phosphoric acid by scanning AVIA with a wavelength of 532nm. + Lightly doped structure, and use 10% HF solution to clean the SiNx film on the front and back sides, and then clean and blow dry;

[0047] ⑸Using furnace tube dry oxidation method to deposit SiO on both sides of silicon wafer 2 membrane;

[0048] ⑹SiNx anti-reflection film is prepared on t...

Embodiment 3

[0052] (1) Carry out surface texture treatment on the crystalline silicon wafer, and prepare SiNx films on the front and back surfaces;

[0053] ⑵Prepare partial N on the back surface of crystalline silicon coated with phosphoric acid by using Paladin UV with a wavelength of 355nm. + Heavy doped structure, clean and blow dry;

[0054] (3) Partial P is prepared on the back surface of crystalline silicon coated with boric acid by using Paladin UV with a wavelength of 355nm. + Heavy doped structure, clean and blow dry;

[0055] ⑷Prepare N on the front surface of crystalline silicon coated with phosphoric acid by Paladin UV with a wavelength of 355nm. + Lightly doped structure, and clean the SiNx film on the front and back with a 10% HF aqueous solution, and then clean and blow dry;

[0056] ⑸Using furnace tube dry oxidation method to deposit SiO on both sides of silicon wafer 2 membrane;

[0057] ⑹SiNx anti-reflection film is prepared on the front and back sides of the silicon wafer;

[005...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Resistanceaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method of an interdigitated back-contact battery based on an N-type substrate. An emitting electrode is prepared by utilizing a laser doping method. The preparation method comprises following steps of texturing the surface of a silicon sheet, plating a medium membrane on the surface of the silicon sheet, heavily doping the N<+> area and the P<+> area locally on the back surface by utilizing the laser, completely lightly doping the N<+> area on the front surface by utilizing the laser, removing the surface medium membrane, preparing a passivation membrane on the surface of the silicon sheet, preparing an antireflection membrane on the surface of the silicon sheet and completing the preparation of a positive electrode and a negative electrode. According to the preparation method, by utilizing laser to scan the silicon sheet with relevant impurity sources spirally coated on the surface, the surface of the silicon sheet is heated to a molten state by utilizing the high energy of the laser, so that the impurities can be well diffused into the body, the doped area can be well controlled, the non-doped area is free from producing lattice defects, and the process is simple, reasonable, safe and reliable.

Description

Technical field [0001] The invention belongs to the technical field of solar cells, and specifically relates to a method for preparing an IBC battery based on an N-type substrate. Background technique [0002] When non-renewable energy sources such as electricity, coal, and petroleum are frequently in urgency, and energy issues have increasingly become a bottleneck restricting international social and economic development, the development of renewable energy has become a major global issue. Among them, solar energy has huge advantages of inexhaustible and inexhaustible, so solar energy is a major direction of renewable energy. Solar cells are favored by people because of their wide range of applications, especially in remote areas, mountains, and deserts, to manufacture large power stations. [0003] The structure of the solar cell is simply a P-N junction. When sunlight shines on the semiconductor P-N junction, new electron-hole pairs are formed. These electrons and holes flow t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 柯航汤安民梅晓东王学林
Owner ZHEJIANG JINKO SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap