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Methods of manufacturing lateral diffused MOS devices

A technology of oxide semiconductors and semiconductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., and can solve problems such as increasing costs

Active Publication Date: 2013-01-02
CHENGDU MONOLITHIC POWER SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to achieve the above requirements, the existing technologies often use additional mask layers to achieve, or use complex steps to achieve, these methods greatly increase the cost

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  • Methods of manufacturing lateral diffused MOS devices
  • Methods of manufacturing lateral diffused MOS devices
  • Methods of manufacturing lateral diffused MOS devices

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Embodiment Construction

[0019] Exemplary embodiments of a semiconductor device including an LDMOS device and a fabrication method thereof of the present invention are fully described below with reference to the accompanying drawings. In one embodiment, a semiconductor device includes an LDMOS device integrated within a semiconductor substrate. LDMOS devices include gate, body, source and drain contact regions. The curvature of the body region of the LDMOS device is controlled by adjusting the layout width of the body region well. In the following detailed description of the invention, numerous details are set forth in order to better understand the invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In order to clearly illustrate the present invention, detailed descriptions of some specific structures and functions are simplified herein. In addition, similar structures and functions that have been describ...

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Abstract

The present invention discloses a method of manufacturing a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device, the method comprising: forming a gate; forming a body having a body curvature, comprising: forming a well on the semiconductor substrate, wherein the well is of a first doping type; forming a base region of a first doping type, wherein the base region is partly overlapped with the well, and wherein the base region is shallower than the well; and forming a source region and a drain contact region of a second doping type, wherein the source is adjacent to the body at one side of the gate and wherein the drain contact region is at another side of the gate; and wherein the body curvature is controlled by adjusting the layout width of the well.

Description

technical field [0001] The present invention relates to semiconductor devices, in particular to laterally diffused metal oxide semiconductor (LDMOS) devices. Background technique [0002] LDMOS devices are widely used in high-voltage fields, such as power supply, power control, communication, automotive electronics, and industrial control. The breakdown voltage of an LDMOS device is a key parameter that affects its performance. Therefore, the main goal of designing LDMOS devices is how to increase the breakdown voltage while maintaining other performances, and there are many factors that affect the breakdown voltage. [0003] In some applications, multiple LDMOS devices with different breakdown voltage requirements need to be integrated on an integrated circuit chip. [0004] In order to realize the above requirements, the existing technologies often adopt the method of adding a mask layer, or adopt complex steps to realize it, and these methods greatly increase the cost. ...

Claims

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Application Information

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IPC IPC(8): H01L21/336
CPCH01L21/2253H01L29/7816H01L29/66681H01L29/0878H01L27/088H01L29/1095
Inventor 郑志星
Owner CHENGDU MONOLITHIC POWER SYST
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