Unlock instant, AI-driven research and patent intelligence for your innovation.

Phase-shift photo-mask manufacturing method

A manufacturing method and photomask technology, which are applied in the field of semiconductor manufacturing, can solve the problems of insufficient simplification of phase-shift photomask steps, and achieve the effects of reducing etching steps, reducing manufacturing costs, and increasing production capacity

Active Publication Date: 2013-01-09
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the steps of the phase-shift photomask manufacturing process according to the prior art are still not simplified enough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase-shift photo-mask manufacturing method
  • Phase-shift photo-mask manufacturing method
  • Phase-shift photo-mask manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0027] The invention proposes a process for making a phase-shift photomask by using a double exposure technique and a formable hard film photoresist. Specifically, Figures 3A-3E Each step of the manufacturing method of the phase-shift photomask according to the embodiment of the present invention is schematically shown.

[0028] Such as Figures 3A-3E As shown, the phase-shift photomask manufacturing method according to the embodiment of the present invention includes:

[0029] The first step: on the phase-shift photomask substrate containing the first photoresist 4 of the formable hard film (as shown in the figure Figure 1A As shown), the first layout pattern 5 structure is formed in the first photoresist 4 through the first photolithograph...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a phase-shift photo-mask manufacturing method. A first layout graph structure is formed on a phase-shift photo-mask substrate of a first photoresist with a shapeable hard mask through first photoetching. A silanization material is coated on the first photoresist to cure the first layout graph structure in the first photoresist, heating is performed to enable the silanization material and the surface of the first photoresist to react so as to form an isolating membrane insoluble in a second photoresist, and redundant silanization material is removed through heating and evaporation. The second photoresist is coated on the cured first photoresist. Second photoetching is performed to form a second layout graph structure in a second photoresist film. A first layout graph and a second layout graph in the photoresists are respectively transmitted to parts of light-transmitting molybdenum silicide films and light-tight chrome films through etching so as to finish phase-shift photo-mask manufacture.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for manufacturing a phase shift photomask. Background technique [0002] Photolithography is one of the key processes for making large-scale integrated circuits. The photolithography process is to transfer the layout pattern on the photomask to the photoresist film, and the photoresist film containing the layout pattern is used as a mask for the subsequent ion implantation or etching process. Photomasks play an important role in the photolithography process. With the continuous improvement of the integration level of semiconductor chips and the continuous reduction of the feature size of transistors, the requirements for photolithography technology are getting higher and higher, and phase shift photomasks have gradually become the mainstream photomasks of high-end photolithography technology. [0003] Such as Figure 1A As shown...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/32G03F7/00G03F7/40
Inventor 毛智彪
Owner SHANGHAI HUALI MICROELECTRONICS CORP