The invention provides a 3D NAND memory and a manufacturing method thereof. Before a grid line gap is formed, a first part selection grid tangent line is formed at a position where a common source electrode contact part is to be formed; the width of the first top selection grid tangent line is greater than that of the grid line gap, so the formed common source contacts the periphery; the stacked layer is replaced by the insulating material for forming the top selection gate tangent, so that a forming window for forming the contact part of the common source electrode is enlarged, even if the contact part is slightly deviated from the common source electrode, the contact part cannot be in contact with the gate layers on the two sides of the bridging common source electrode, the electric leakage risk of the device is reduced, and the yield of the device is improved. Meanwhile, the forming window of the contact part is enlarged, so that the manufacturing difficulty of the contact part is reduced to a certain extent. In addition, the first top selection gate tangent line and the second top selection gate tangent line can be formed by using the same mask, so that the preparation of the mask and the etching step are saved, and the manufacturing cost of the memory is reduced.