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Production process of N-type back contact solar cell

A solar cell and production process technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of large equipment investment and complex manufacturing process of back-contact solar cells, and achieve reduced pollution, good passivation, and reduced production cost effect

Inactive Publication Date: 2012-07-11
杨正刚
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the shortcomings of the existing back-contact solar cells such as complex manufacturing process and large equipment investment, and provide a production process for N-type back-contact solar cells, which is easy for industrial realization and eliminates the existing etching steps. Improve production efficiency, reduce costs, and reduce environmental pollution, and the realization of this process is compatible with industrialized conventional solar cell production lines

Method used

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  • Production process of N-type back contact solar cell
  • Production process of N-type back contact solar cell
  • Production process of N-type back contact solar cell

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Embodiment Construction

[0031] The N-type back contact solar cell of the present embodiment (such as figure 1 , figure 2 Shown), the production process includes the following steps:

[0032] The first step is to texture the N-type silicon substrate 4, so that the light-facing surface of the silicon substrate can obtain a textured light-trapping structure 3 with a light-trapping effect; Texturing; if the polycrystalline silicon substrate is a polysilicon wafer, acid texturing is carried out;

[0033] The second step is to oxidize the surface of the silicon substrate 4 after texturing by a wet heat oxidation method, so that a silicon dioxide oxide layer is formed on the surface of the silicon substrate;

[0034] The third step is to remove the silicon dioxide on the backlight surface of the silicon substrate that matches the pattern of the positive electrode to form a diffusion window;

[0035] In this step, there are two methods for making a diffusion window:

[0036] 1. Use a slurry that is corr...

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Abstract

The invention relates to a production process of an N-type back contact solar cell. The production process comprises the following steps of: flocking a silicon substrate so that a light reflective surface has a flock surface; oxidizing the silicon substrate; manufacturing a diffusion window on a back side of the silicon substrate; carrying out selective boron source thermal diffusion to enable the exposed silicon to be doped by boron to form a PN junction; removing an oxide layer and impurities; oxidizing the silicon substrate again; plating an anti-reflecting film on the light reflective surface of the silicon substrate; carrying out screen printing by using metal electrode paste; and sintering to obtain a metal electrode to finish the manufacturing of the cell. The production process disclosed by the invention is artful in concept, compatible with conventional industrial cell production and easy to realize industrial manufacturing; meanwhile, relative to the conventional solar cell, the N-type back contact solar cell manufactured by the production process disclosed by the invention has the advantages that: an etching step with higher cost is saved, and metal electrode screen printing is changed into a one-step screen printing from three-step metal electrode screen printing of the conventional solar cell. The production process disclosed by the invention is widely applied in the photovoltaic field and has favorable market prospect.

Description

technical field [0001] The invention relates to a manufacturing technology of an N-type back-contact solar cell, which belongs to the field of photovoltaics. Background technique [0002] Solar cells are the core components of photoelectric conversion. As far as the applicant knows, the current domestic industrial production of solar cells is either a conventional P-type solar cell (the substrate silicon wafer is doped with Group III elements) or an N-type solar cell (the substrate silicon wafer is doped with Group V elements) , are solar cells with double-sided electrodes, that is, there are grid wire electrodes on the front side (light-facing side) of the solar cell and the back side of the solar cell. There are grid wire electrodes on the front of the conventional battery, which will block part of the incident light, and there is a dead layer in the front (toward the light) diffusion of the solar cell, which is not conducive to the short-wave response of sunlight. Howev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 杨正刚
Owner 杨正刚
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