A manufacturing process of copper interconnection wire

A manufacturing process and interconnection technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of increasing productivity, reducing etching steps, and reducing manufacturing costs
CN102832107BActive Publication Date: 2015-08-19SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2015-08-19

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Abstract

The invention relates to the manufacturing field of semiconductors, in particular to a manufacturing process for a copper interconnection line. According to the manufacturing process for the copper interconnection line disclosed by the invention, silanization materials are adopted in a trench-preference copper interconnection process to form an isolating film between two layers of photoresists in a dual-exposure technology, and through holes and metal trench structures in the photoresists are transferred to dielectric layers in sequence, so that the existing process, in which the etching of the metal trench and the etching of the through hole are carried out in two independent steps, can be replaced, the etching steps in dual-Damascus metal interconnection line process are effectively reduced, the production capacity is increased and the manufacturing cost is reduced.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing process of copper interconnection wires. Background technique

[0002] As the integration level of semiconductor chips continues to increase, the feature size of transistors continues to shrink.

[0003] When the characteristic size of transistors enters the 130nm technology node, due to the high resistance of aluminum, copper interconnection gradually replaces aluminum interconnection and becomes the mainstream of metal interconnection. Now the widely used method of making copper wire is damascene technology. , in which the trench-first dual-damascene process is one of the methods to realize the one-time forming of copper wires and through-hole copper.

[0004] Figures 1a-1f It is a schematic structural flow diagram of groove priority double damascene process in the background technology of the present invention; as Figures 1a-1f As shown, after depo...

Claims

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