Semiconductor device manufacturing method based on double patterning

Abstract

The invention relates to a semiconductor device manufacturing method based on double patterning. The method comprises the following steps: a semiconductor substrate and a mask layer located on the substrate are provided; a patterned photoresist layer is formed on the mask layer, wherein the patterned photoresist layer is photoresist cores separated through openings; a crosslinked top surface layer is formed on the patterned photoresist layer; a part of the photoresist layer sidewall is removed to thin the photoresist cores and reduce the critical size of the photoresist cores; spin coating is performed on the inner sidewall material layer, and the crosslinked top surface layer is covered; the etch back operation is performed on the inner sidewall material layer to form inner sidewalls on the photoresist cores; and the remaining crosslinked top surface layer and remaining photoresist cores are removed to form a double-patterned mask. The method of the invention is more simple, the stress problem caused by inner sidewall material chemical vapor deposition does not exist, and etch steps are reduced, so the cost is greatly reduced, and the product yield can be further improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and in particular, the present invention relates to a method for manufacturing a semiconductor device based on a double pattern. Background technique [0002] There is an increasing demand for high-capacity semiconductor memory devices, and attention has been paid to the integration density of these semiconductor memory devices. In order to increase the integration density of semiconductor memory devices, many different methods have been used in the prior art, such as by reducing the wafer size. And / or changing the internal structure cells to form multiple memory cells on a single wafer, for the method of increasing the integration density by changing the cell structure, attempts have been made to change the layout of the active area or change the cell layout to reduce the amount of memory cells. Small unit area. [0003] Double-patterning (DP) overcomes the K1 limitation throu...

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Problems solved by technology

In order to reduce costs, the second method can be selected, such as image 3 As shown in A, a photoresist pattern is directly formed on the substrate, and then a spacer material layer is deposited on the photoresist pattern, but because the hardness of the photoresist is not enough, it is not enough to bear the spacer The pressure of the material layer and the pressure during etching, so it is easy to deform the pattern on the photoresist, resulting in Figure 4 The pattern of B, the device is severely deformed when per

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