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Through-hole-priority dual damascene copper interconnection method for reducing coupling capacitance of redundant metal

A redundant metal, through-hole priority technology, applied in the direction of circuit, electrical components, pattern surface photolithography, etc., to achieve the effect of reducing production costs, increasing production capacity, and reducing etching steps

Active Publication Date: 2013-08-28
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its cost is much higher than traditional single exposure forming technology

Method used

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  • Through-hole-priority dual damascene copper interconnection method for reducing coupling capacitance of redundant metal
  • Through-hole-priority dual damascene copper interconnection method for reducing coupling capacitance of redundant metal
  • Through-hole-priority dual damascene copper interconnection method for reducing coupling capacitance of redundant metal

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Embodiment Construction

[0034] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0035] Figure 3A to Figure 3IA cross-sectional view schematically shows various steps of a via-first dual damascene copper interconnection method for reducing redundant metal coupling capacitance according to a preferred embodiment of the present invention. The via-first dual damascene copper interconnect method utilizes double exposure technology and formable hard film photoresist to reduce redundant metal coupling capacitance.

[0036] Specifically, as Figure 3A to Figure 3I As shown, according to the preferred embodiment of the present invention, the via-first dual damascene copper interconnection method for reducing redundant metal coupling capacitance includes:

[0037] The first step: first deposit a dielectric layer 2 on the substrate...

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Abstract

The invention discloses a through-hole-priority dual damascene copper interconnection method for reducing coupling capacitance of redundant metal. According to the through-hole-priority dual damascene copper interconnection method for reducing the coupling capacitance of the redundant metal, a dielectric layer is firstly deposited on a substrate silicon wafer and then the dielectric layer is coated with first photoresist; a through hole structure and a redundant metallic groove structure are formed in a first photoresist film through exposure and development, and the metallic groove structure formed in the first photoresist penetrates through the first photoresist; in the same developing machine, the first photoresist is coated with chemical shrink material RELACS to solidify the through hole structure and the redundant metallic groove structure which are formed in the first photoresist, the RELACS can react with the surface of the first photoresist to form an isolating film which can not dissolve in second photoresist under the heating condition, and then the remaining RELACS which does not react with the surface of the first photoresist is removed; the first photoresist on which the isolating film is formed is coated with the second photoresist, and the anti-etching capacity of the first photoresist is stronger than that of the second photoresist; a metallic groove structure located in the through hole structure is formed in a second photoresist film through exposure and development.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a through-hole priority double damascene copper interconnection method for reducing redundant metal coupling capacitance. Background technique [0002] As the integration level of semiconductor chips continues to increase, the feature size of transistors continues to shrink. After entering the 130nm technology node, limited by the high resistance characteristics of aluminum, copper interconnection gradually replaces aluminum interconnection and becomes the mainstream of metal interconnection. Since the copper dry etching process is not easy to realize, the manufacturing method of the copper wire cannot be obtained by etching the metal layer like the aluminum wire. The widely used manufacturing method of copper wire is damascene technology called damascene process. [0003] Damascus damascene copper interconnects can be realized through a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/027G03F7/00G03F7/40
Inventor 毛智彪
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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