Method for manufacturing phase shift photomask

A production method and photomask technology, which are applied to the photoengraving process of the pattern surface, the exposure device of the photoengraving process, optics, etc., can solve the problems such as insufficient simplification of the phase-shift photomask steps, and achieve the reduction of etching steps, The effect of increasing productivity and reducing production costs

Inactive Publication Date: 2013-01-16
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0007] However, the steps of the phase-shift photomask manufacturing process according to the prior art are still not simplified enough

Method used

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  • Method for manufacturing phase shift photomask
  • Method for manufacturing phase shift photomask
  • Method for manufacturing phase shift photomask

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Embodiment Construction

[0022] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0023] The invention proposes a process for making a phase-shift photomask by using a double exposure technique and a formable hard film photoresist. Specifically, Figure 3A -3E schematically shows various steps of the method for fabricating a phase-shift photomask according to an embodiment of the present invention.

[0024] Such as Figure 3A -As shown in 3E, the phase-shift photomask manufacturing method according to the embodiment of the present invention includes:

[0025] The first step: on the phase-shift photomask substrate containing the first photoresist 4 of the formable hard film (as shown in the figure Figure 1A As shown), the first layout pattern 5 structure is formed in the first photoresist 4 through the first photolithograph...

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Abstract

The invention provides a method for manufacturing a phase shift photomask. The method comprises the following steps of: forming a first layout graphics structure in a first photoresist in a first photoetching way on a phase shift photomask substrate comprising the first photoresist capable of forming a hard film; coating a micro auxiliary film on the first photoresist to cure the first layout graphics structure in the first photoresist, performing heating to react the micro auxiliary film and the surface of the first photoresist to form a separation film insoluble in a second photoresist, and removing a redundant micro auxiliary film by using de-ionized water or the de-ionized water solution of a surfactant; coating the second photoresist on the cured first photoresist; performing second photoetching, thereby forming a second layout graphics structure in a second photoresist film; and performing etching to transfer the first and second layout graphics structures in the photoresists into a partially transparent molybdenum silicide thin film and a non-transparent chromium thin film respectively to finish manufacturing the phase shift photomask. According to the method, the etching step of a phase shift photomask manufacturing process is eliminated, so that yield can be effectively improved, and manufacture cost can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for manufacturing a phase shift photomask. Background technique [0002] Photolithography is one of the key processes for making large-scale integrated circuits. The photolithography process is to transfer the layout pattern on the photomask to the photoresist film, and the photoresist film containing the layout pattern is used as a mask for the subsequent ion implantation or etching process. Photomasks play an important role in the photolithography process. With the continuous improvement of the integration level of semiconductor chips and the continuous reduction of the feature size of transistors, the requirements for photolithography technology are getting higher and higher, and phase shift photomasks have gradually become the mainstream photomasks of high-end photolithography technology. [0003] Such as Figure 1A As shown...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/26G03F7/20
Inventor 毛智彪
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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