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Manufacturing method for copper interconnection lines

A manufacturing method and interconnection wire technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of reducing etching steps, reducing manufacturing costs, and increasing productivity

Inactive Publication Date: 2012-12-05
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the double patterning technology requires two photolithography and etching, its cost is much higher than the traditional single exposure forming technology

Method used

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  • Manufacturing method for copper interconnection lines
  • Manufacturing method for copper interconnection lines
  • Manufacturing method for copper interconnection lines

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Experimental program
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Embodiment Construction

[0031] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0032] Figures 3a-3i It is a schematic structural flow diagram of a copper interconnection method of the present invention;

[0033] Such as Figures 3a-3i As shown in the present invention, a method for manufacturing a copper interconnection line of the present invention, first, deposit a low dielectric constant dielectric layer 32 on the upper surface of a silicon substrate 31, and coat the first photoresist 33 that can form a hard mask to cover the dielectric layer 32, after exposure and development, the excess photoresist is removed to form a first hard mask photoresist 331 with a metal groove structure 34; wherein, the material of the first photoresist 33 contains silane groups, silane oxides Base or clathrate siloxane, etc.

[0034] Next, in the same developing station, coat the miniaturized cured material 35 such as miniaturized cured f...

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Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method for copper interconnection lines. According to the manufacturing method for copper interconnection lines, provided by the invention, miniature solidified materials are adopted in a slot-prior copper interconnection process to form an isolating film between two layers of light resistors in a double-exposure technology, and through holes and metal slot structures in the light resistors are shifted to media layers sequentially, so that the existing process in which metal slot etching and through hole etching are traditionally regarded as two independent steps is replaced, and further the etching steps in a double Damascus metal interconnection line process are reduced effectively. Therefore, the productivity is improved and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing copper interconnection wires. Background technique [0002] As the integration level of semiconductor chips continues to increase, the feature size of transistors continues to shrink. [0003] When the characteristic size of transistors enters the 130nm technology node, due to the high resistance of aluminum, copper interconnection gradually replaces aluminum interconnection and becomes the mainstream of metal interconnection. Now the widely used method of making copper wire is damascene technology. , in which the trench-first dual-damascene process is one of the methods to realize the one-time forming of copper wires and through-hole copper. [0004] Figures 1a-1f It is a schematic structural flow diagram of groove priority double damascene process in the background technology of the present invention; as Figures 1a-1f As shown, after depo...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 毛智彪
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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