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Semiconductor substrate surface structure and method for forming same

A substrate surface, semiconductor technology, applied in the direction of semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve the problems of solar cell manufacturing cost and manufacturing time increase, and achieve the effect of low cost

Inactive Publication Date: 2015-04-22
MOTECH INDUSTRIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the known surface roughening steps, the deposition and removal of the mask is costly and time consuming, which increases the manufacturing cost and manufacturing time of the solar cell

Method used

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  • Semiconductor substrate surface structure and method for forming same
  • Semiconductor substrate surface structure and method for forming same
  • Semiconductor substrate surface structure and method for forming same

Examples

Experimental program
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Embodiment Construction

[0024] Please also refer to figure 1 , which is a schematic flowchart illustrating a method 100 for forming a surface structure of a semiconductor substrate according to an embodiment of the present invention. In the method 100 for forming the surface structure of a semiconductor substrate, a mesh electrode template providing step 110 is first performed to provide a mesh electrode template 200, such as Figure 2a shown. Figure 2a It is a schematic diagram illustrating the structure of a mesh electrode template 200 according to an embodiment of the present invention. The mesh electrode template 200 includes a plurality of interconnected wires 210 , and these wires 210 form a plurality of rectangular hollow areas 220 . In this embodiment, the wire 210 is a metal wire, but in other embodiments of the present invention, the wire 210 can also be a non-conductive wire covered with a conductive material.

[0025] After the mesh electrode template providing step 110, an anodizing t...

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PUM

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Abstract

The invention relates to a semiconductor substrate surface structure and a method for forming the same. The method for forming the semiconductor substrate surface structure comprises the following steps of: providing a mesh electrode template first, wherein the mesh electrode template comprises a plurality of lead wires which are staggered mutually; secondarily, carrying out anodic oxidation treatment so as to form a plurality of mutually-staggered rodlike oxides on the surface of a semiconductor substrate by using the mesh electrode template, wherein in allusion to the rodlike oxides, a plurality of semiconductor areas are defined on the surface of the semiconductor substrate; thirdly, etching the surface of the semiconductor substrate so as to form a depressed part in each semiconductor area; and finally, removing the rodlike oxides and forming mutually-staggered groove parts in the surface of the semiconductor substrate. The semiconductor substrate surface structure comprises the grooves part and the depressed parts.

Description

technical field [0001] The present invention relates to a surface structure of a semiconductor substrate and a method for forming the surface structure, in particular to a surface structure of a semiconductor substrate capable of roughening the surface of a solar cell and a method for forming the surface structure. Background technique [0002] In recent years, as the problem of environmental pollution has become more and more serious, many countries have begun to develop new green energy to reduce the problem of environmental pollution. Solar cells can convert the sun's light energy into electrical energy, and this conversion will not produce any polluting substances, so solar cells are gradually being valued. [0003] Solar cells use the photoelectric effect of semiconductors to directly absorb sunlight to generate electricity. The principle of solar cell power generation is that when sunlight shines on the solar cell, the solar cell will absorb the solar light energy, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0352
CPCY02P70/50
Inventor 陈亮斌
Owner MOTECH INDUSTRIES