Laminated diode manufacturing process and chip sieve tray thereof

Abstract

The invention relates to a novel laminated diode manufacturing process and a chip sieve tray thereof. The novel laminated diode manufacturing process is characterized by comprising the following steps of forming a wide groove in the P surface or the N surface of a silicon wafer, wherein the groove is 70 to 250 mum in width and 60 to 100 mum in depth; scribing in the way that the center of the bottom of the wide groove serves as a boundary; after filling a lead and sieving a chip, welding and fixing the chip and the lead by using a welding material, and when the chip is sieved, matching a small surface formed by forming the wide groove with a profile hole of the chip sieve tray to identify the polarity of the P surface or the N surface; and sequentially performing acid washing, strip combing, sizing, glue curing, mould pressing, post curing, electroplating, testing, character printing, packaging and goods delivery. Due to the steps of forming the wide groove in the P surface or the N surface of the silicon wafer, scribing in the way that the center of the bottom of the wide groove serves as the boundary, matching the small surface formed by forming the wide groove with the profile hole of the chip sieve tray to automatically identify and adjust the polarity of the P surface or the N surface, manual identification is not required, the efficiency and the accuracy are effectively improved, and the damage to the chip caused by manual adjustment with a nipper is avoided.

Description

technical field [0001] The invention relates to a manufacturing process of laminated diodes, in particular to a chip sieve tray for realizing the manufacturing process of laminated diodes. Background technique [0002] At present, the laminated diode series products on the market are all produced by the traditional coloring lamination process (the purpose of coloring is to distinguish the PN polarity of the diode). The disadvantages of this process are low chip loading efficiency and high labor costs. The specific process is as follows: silicon wafer P-side coloring→scribing→lead wire filling→sieving chips (manual identification of polarity)→soldering→acid cleaning→combing strips→gluing→glue curing→molding→post-curing→electroplating→testing , Printing→packaging→shipping. For the products produced by the above process, when the polarity is manually identified, the chip with the opposite polarity will be adjusted, and the tweezers used in the adjustment process will cause da...

AI Technical Summary

Problems solved by technology

For the products produced by the above process, when the polarity is manually identified, the chip with the opposite polarity will be adjusted, and the tweezers used in the adjustment process will cause damage to the chip table, which restricts the electrical yield of this product. Improvement (the current industry electrical yield rate is 85%)

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