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Preparation method of ultra-high-purity arsenic monocrystal pieces

A technology of single crystal and single wafer, which is applied in the field of preparation of ultra-high purity arsenic single crystal wafers, achieving the effect of good application prospects

Active Publication Date: 2015-03-04
峨嵋半导体材料研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Ultra-high-purity arsenic refers to arsenic with a purity above 5N, and there are no literature reports on ultra-high-purity arsenic single wafers

Method used

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  • Preparation method of ultra-high-purity arsenic monocrystal pieces

Examples

Experimental program
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Effect test

Embodiment 1

[0072] A method for preparing an ultra-high-purity arsenic single crystal sheet, characterized in that it comprises the following steps:

[0073] (1) Surface treatment of quartz tube

[0074] (1.1) First wash off the white silica attached to the surface of the quartz tube with hydrofluoric acid;

[0075] (1.2) Soak the quartz tube in aqua regia for 1 day, and remove the impurities on the surface by acid etching;

[0076] (1.3) Clean the quartz tube with high-purity water and dry it in an infrared lamp drying oven.

[0077] (2) Ultra-high purity arsenic deoxidation packaging

[0078] Put ultra-high-purity arsenic with a purity of 7N into a cleaned quartz tube, place it in an electric furnace at a temperature of 500°C, and evacuate it to 10 -2 Pa, take off the oxide film on the surface of arsenic to make the surface of arsenic show a metallic luster, and seal the quartz tube with a hydrogen-oxygen flame lamp.

[0079] (3) Placed in a horizontal tube furnace

[0080] (3.1) U...

Embodiment 2

[0089] A method for preparing an ultra-high-purity arsenic single crystal sheet, characterized in that it comprises the following steps:

[0090] (1) Surface treatment of quartz tube

[0091] (1.1) First wash off the white silica attached to the surface of the quartz tube with hydrofluoric acid;

[0092] (1.2) Soak the quartz tube in aqua regia for 1 day, and remove the impurities on the surface by acid etching;

[0093] (1.3) Clean the quartz tube with high-purity water and dry it in an infrared lamp drying oven.

[0094] (2) Ultra-high purity arsenic deoxidation packaging

[0095] Put ultra-high-purity arsenic with a purity of 7N into a cleaned quartz tube, place it in an electric furnace at a temperature of 600°C, and evacuate it to 10 -3 Pa, take off the oxide film on the surface of arsenic to make the surface of arsenic show a metallic luster, and seal the quartz tube with a hydrogen-oxygen flame lamp.

[0096] (3) Placed in a horizontal tube furnace

[0097] (3.1) U...

Embodiment 3

[0106] A method for preparing an ultra-high-purity arsenic single crystal sheet, characterized in that it comprises the following steps:

[0107] (1) Surface treatment of quartz tube

[0108] (1.1) First wash off the white silica attached to the surface of the quartz tube with hydrofluoric acid;

[0109] (1.2) Soak the quartz tube in aqua regia for 1 day, and remove the impurities on the surface by acid etching;

[0110] (1.3) Clean the quartz tube with high-purity water and dry it in an infrared lamp drying oven.

[0111] (2) Ultra-high purity arsenic deoxidation packaging

[0112] Put ultra-high-purity arsenic with a purity of 7N into a cleaned quartz tube, place it in an electric furnace at a temperature of 550°C, and evacuate it to 10 -3 Pa, take off the oxide film on the surface of arsenic to make the surface of arsenic show a metallic luster, and seal the quartz tube with a hydrogen-oxygen flame lamp.

[0113] (3) Placed in a horizontal tube furnace

[0114] (3.1) U...

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Abstract

The invention discloses a preparation method of ultra-high-purity arsenic monocrystal pieces. The method comprises the steps that: (1) quartz tube surface treatment is carried out; (2) ultra-high-purity arsenic deoxidation package is carried out; (3) the material is placed in a horizontal tube furnace; and (4) the material is melted in the horizontal tube furnace, and cooling crystallization is carried out. According to the invention, with the sealed quartz tube and pressure generated by arsenic high-temperature melting, purposes of arsenic melting and crystal growth are achieved. Under a normal temperature undercooling condition, crystals grow when liquid-state arsenic in the tube reaches an undercooling degree. 30-60 pieces are grown in each tube, and monocrystal pieces are produced with a twin-crystal manner. Therefore, domestic product quality requirements and export quality requirements can be satisfied. The method has good application prospect.

Description

technical field [0001] The invention relates to a preparation method of an ultra-high-purity arsenic single crystal sheet. Background technique [0002] Ultra-high-purity arsenic refers to arsenic with a purity above 5N, and there are no literature reports on ultra-high-purity arsenic single wafers. Since the melting point of arsenic is 817°C at 36 standard atmospheric pressure (atm), the surface of arsenic is quickly oxidized in the air (under normal temperature and pressure). Even if there is a single crystal arsenic rod, it is difficult to prepare it by cutting, grinding and polishing. It is very difficult to produce ultra-high-purity arsenic single wafers for high-purity arsenic chips. In order to solve this problem, to study the growth characteristics of arsenic crystals at high temperature and high pressure, crystals were grown in closed quartz tubes. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a meth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/00C30B29/02
Inventor 陈国忠杨卫东
Owner 峨嵋半导体材料研究所
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