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Silicon nitride coating method with silicon wafer surface cleaning function

A silicon wafer surface, silicon nitride technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of elimination of roll marks, inability to completely eliminate them, and increased production costs, to eliminate roll marks and to have a good appearance. Effect

Inactive Publication Date: 2013-01-30
镇江大全太阳能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of roller marks seriously affects the appearance of the cell, resulting in a decrease in the appearance yield of the cell
At present, there are no effective measures to eliminate the roller marks caused by the contact of the rollers in the drying place.
Increasing the maintenance frequency of the rollers or shortening the replacement cycle can reduce the probability of roller marks, but it cannot be completely eliminated, and increasing the maintenance frequency or shortening the replacement cycle will also lead to an increase in production costs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Step 1: Introduce N2 into the reactor of the flat-plate direct method silicon nitride coating equipment to make the silicon wafer reach a constant temperature. The flow range of N2 is 15000 sccm / min; the temperature is 400°C (the temperature in the following steps is kept consistent with this step);

[0014] Step 2, feed cleaning gases NH3, N2, Ar, the flow rate of NH3 is 3000 sccm / min, the flow rate of N2 is 15000 sccm / min, the flow rate of Ar is 5000 sccm / min, and the control pressure is 1Torr;

[0015] Step 3, turn on the RF power supply for surface plasma cleaning, the RF power is 8000W, and the time is 50s (too short cleaning effect is not good, too long affects production capacity);

[0016] Step 4, then turn off the RF power supply, and pump out the cleaning residual gas for >10s (if the production capacity is not affected, it can be extended appropriately);

[0017] Step B5, feed silicon nitride deposition gas, NH3 flow rate is 550 sccm / min, SiH4 flow rate is 17...

Embodiment 2

[0019] Step 1: Introduce N2 into the reactor of the flat-plate direct method silicon nitride coating equipment to make the silicon wafer reach a constant temperature. The flow range of N2 is 20,000 sccm / min; the temperature is 400°C (the temperature in the following steps is kept consistent with this step);

[0020] Step 2, feed cleaning gases NH3, N2, Ar, the flow rate of NH3 is 2500 sccm / min, the flow rate of N2 is 20000 sccm / min, the flow rate of Ar is 5000 sccm / min, and the control pressure is 1.5 Torr;

[0021] Step 3, turn on the RF power supply for surface plasma cleaning, the RF power is 6000W, and the time is 40s (too short cleaning effect is not good, too long affects production capacity);

[0022] Step 4, then turn off the RF power supply, and pump out the cleaning residual gas for >10s (if the production capacity is not affected, it can be extended appropriately);

[0023] Step 5, feed silicon nitride deposition gas, NH3 flow rate is 550 sccm / min, SiH4 flow rate is...

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PUM

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Abstract

The invention relates to manufacture of crystalline silicon solar cells, in particular to a nitride coating method with a silicon wafer surface cleaning function. The nitride coating method comprises the steps of: when a silicon wafer is subjected to silicon nitride coating on a silicon nitride coating device, after the silicon wafer enters a reaction cavity, before a silicon nitride deposition is carried out, introducing cleaning gases NH3, N2 and Ar into the reaction cavity, opening an original radio frequency power supply of the silicon nitride coating device, under a reaction temperature capable of generating plasma, carrying out chemical and physical functions on the surface of the silicon wafer by active radials and charged particles in the plasma for cleaning pollutant residues on the surface of the silicon wafer; and then carrying out conventional silicon nitride deposition. The nitride coating method can be used for eliminating idler wheel mark pollution on the surface of the silicon wafer in a silicon nitride coating process, and is simple and convenient for operation.

Description

technical field [0001] The invention relates to the manufacture of crystalline silicon solar cells, in particular to a silicon nitride coating method with the function of cleaning the surface of a silicon wafer. Background technique [0002] Cleaning is a crucial process in the production process of crystalline silicon solar cells. At present, the chain wet cleaning process (texturing or etching process) is widely used in the production of crystalline silicon cells. Using the chain wet cleaning process, the silicon wafer will have a drying step at the end to remove the residual water on the surface of the cell. At present, hot air knives are commonly used to dry silicon wafers. When using hot air knives to dry silicon wafers, in order to keep the silicon wafers in balance, there are upper and lower rollers on the equipment to hold the silicon wafers to ensure that the silicon wafers will not be affected by the compressed air. Offset or even jumping. Such a design can ensu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/205
Inventor 李化阳张良任海兵
Owner 镇江大全太阳能有限公司
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