Silicon nitride coating method with silicon wafer surface cleaning function
A silicon wafer surface, silicon nitride technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of elimination of roll marks, inability to completely eliminate them, and increased production costs, to eliminate roll marks and to have a good appearance. Effect
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Embodiment 1
[0013] Step 1: Introduce N2 into the reactor of the flat-plate direct method silicon nitride coating equipment to make the silicon wafer reach a constant temperature. The flow range of N2 is 15000 sccm / min; the temperature is 400°C (the temperature in the following steps is kept consistent with this step);
[0014] Step 2, feed cleaning gases NH3, N2, Ar, the flow rate of NH3 is 3000 sccm / min, the flow rate of N2 is 15000 sccm / min, the flow rate of Ar is 5000 sccm / min, and the control pressure is 1Torr;
[0015] Step 3, turn on the RF power supply for surface plasma cleaning, the RF power is 8000W, and the time is 50s (too short cleaning effect is not good, too long affects production capacity);
[0016] Step 4, then turn off the RF power supply, and pump out the cleaning residual gas for >10s (if the production capacity is not affected, it can be extended appropriately);
[0017] Step B5, feed silicon nitride deposition gas, NH3 flow rate is 550 sccm / min, SiH4 flow rate is 17...
Embodiment 2
[0019] Step 1: Introduce N2 into the reactor of the flat-plate direct method silicon nitride coating equipment to make the silicon wafer reach a constant temperature. The flow range of N2 is 20,000 sccm / min; the temperature is 400°C (the temperature in the following steps is kept consistent with this step);
[0020] Step 2, feed cleaning gases NH3, N2, Ar, the flow rate of NH3 is 2500 sccm / min, the flow rate of N2 is 20000 sccm / min, the flow rate of Ar is 5000 sccm / min, and the control pressure is 1.5 Torr;
[0021] Step 3, turn on the RF power supply for surface plasma cleaning, the RF power is 6000W, and the time is 40s (too short cleaning effect is not good, too long affects production capacity);
[0022] Step 4, then turn off the RF power supply, and pump out the cleaning residual gas for >10s (if the production capacity is not affected, it can be extended appropriately);
[0023] Step 5, feed silicon nitride deposition gas, NH3 flow rate is 550 sccm / min, SiH4 flow rate is...
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