Semiconductor structures with rare earth oxides

Abstract

The present invention proposes a semiconductor structure with a rare earth oxide, comprising: a semiconductor substrate; and alternately stacked multilayer insulating oxide layers and multilayer single crystal semiconductor layers formed on the semiconductor substrate, wherein, with the semiconductor substrate The material of the insulating oxide layer in contact is rare earth oxide or silicon dioxide, and the material of the remaining insulating oxide layers is single crystal rare earth oxide. According to the semiconductor structure of the embodiment of the present invention, through the lattice matching between the insulating oxide layer and the single crystal semiconductor layer, the crystal defects of the semiconductor structure can be significantly reduced, thereby facilitating the further formation of high-performance, high-density semiconductor structures on the semiconductor structure. The three-dimensional semiconductor device can greatly improve the integration density of the device, and can also realize the three-dimensional integration of different devices.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure with rare earth oxides. Background technique [0002] In the field of semiconductors, in order to obtain highly integrated chips, the use of three-dimensional structures is one of the development directions. For example, a memory chip with a multi-layer stack structure is an important technical trend of high-density storage technology at present. In order to prepare a multilayer stacked device structure, one of the methods is to first prepare a semiconductor structure in which multiple layers of insulating dielectric layers and multiple layers of single crystal semiconductor layers are alternately stacked, and then prepare devices on the single crystal semiconductor layer. However, there has been no significant progress in the fabrication technology of a semiconductor structure having an alternately stacked structure of multiple layers of insulating dielec...

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Problems solved by technology

However, traditional insulating media such as silicon dioxide or silicon oxynitride have poor thermal conductivity and cannot meet the heat dissipation requirements of high-density semiconductor logic devices.

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