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Sulfide-based triple-doped electron trapping material and preparation method thereof

An electron capture and three-doping technology, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of weak light-excited luminescence intensity and low optical storage performance, so as to increase the number of captured electrons, expand the scope of application, and improve the Effect of Fluorescence Emission Intensity

Inactive Publication Date: 2013-02-13
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the existing Eu 2+ , Sm 3+ The double rare earth-doped sulfide system has weak light-excited luminescence intensity and low optical storage performance. The present invention provides a sulfide-based triple-doped electron-trapping material and its preparation method

Method used

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  • Sulfide-based triple-doped electron trapping material and preparation method thereof
  • Sulfide-based triple-doped electron trapping material and preparation method thereof
  • Sulfide-based triple-doped electron trapping material and preparation method thereof

Examples

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Embodiment 1

[0027] Example 1 The preparation of chemical formula is Sr 0.9959 Eu 0.002 SM 0.002 Er 0.0001 Triple-doped electron-trapping materials of S

[0028] According to the chemical formula Sr 0.9959 Eu 0.002 SM 0.002 Er 0.0001 The stoichiometric ratio of each element in S weighs 1.0538gSr(NO 3 ) 2 , 0.6607g (NH 4 ) 2 SO 4 , 0.0018gEu 2 o 3 , 0.0017gSm 2 o 3 , 0.0001gEr 2 o 3 , the Sr(NO 3 ) 2 and (NH 4 ) 2 SO 4 were dissolved in deionized water to obtain Sr(NO 3 ) 2 solution and (NH 4 ) 2 SO 4 solution; the Eu 2 o 3 , Sm 2 o 3 , Er 2 o 3 Dissolve in dilute nitric acid to obtain a rare earth nitrate solution; slowly mix Sr(NO 3 ) 2 The solution is added to the rare earth nitrate solution to obtain a mixed solution, and then (NH 4 ) 2 SO 4 The solution was slowly dripped into the above mixed solution and stirred continuously to produce a white precipitate. The pH was adjusted to neutral by ammonia water, and the stirring was continued for 3 hours...

Embodiment 2

[0029] Example 2 Preparation of chemical formula is Sr 0.995 Eu 0.002 SM 0.002 Er 0.001 Triple-doped electron-trapping materials of S

[0030] According to the chemical formula Sr 0.995 Eu 0.002 SM 0.002 Er 0.001 The stoichiometric ratio of each element in S weighs 1.0528gSr(NO 3 ) 2 , 0.6607g (NH 4 ) 2 SO 4 , 0.0018gEu 2 o 3 , 0.0017gSm 2 o 3 , 0.0010gEr 2 o 3 , the Sr(NO 3 ) 2 and (NH 4 ) 2 SO 4 were dissolved in deionized water to obtain Sr(NO 3 ) 2 solution and (NH 4 ) 2 SO 4 solution; the Eu 2 o 3 , Sm 2 o 3 , Er 2 o 3 Dissolve in dilute nitric acid to obtain a rare earth nitrate solution; slowly mix Sr(NO 3 ) 2 The solution is added to the rare earth nitrate solution to obtain a mixed solution, and then (NH 4 ) 2 SO 4 The solution was slowly dripped into the above mixed solution and stirred continuously to produce a white precipitate. Adjust the pH to neutral with ammonia water and continue to stir for 2 hours. Put the obtained suspe...

Embodiment 3

[0031] Example 3 The preparation of chemical formula is Sr 0.994 Eu 0.002 SM 0.002 Er 0.002 Triple-doped electron-trapping materials of S

[0032] According to the chemical formula Sr 0.994 Eu 0.002 SM 0.002 Er 0.002 The stoichiometric ratio of each element in S weighs 1.0518gSr(NO 3 ) 2 , 0.6607g (NH 4 ) 2 SO 4 , 0.0018gEu 2 o 3 , 0.0017gSm 2 o 3 , 0.0019gEr 2 o 3 , the Sr(NO 3 ) 2 and (NH 4 ) 2 SO 4 were dissolved in deionized water to obtain Sr(NO 3 ) 2 solution and (NH 4 ) 2 SO 4 solution; the Eu 2 o 3 , Sm 2 o 3 , Er 2 o 3 Dissolve in dilute nitric acid to obtain a rare earth nitrate solution; slowly mix Sr(NO 3 ) 2 The solution is added to the rare earth nitrate solution to obtain a mixed solution, and then (NH 4 ) 2 SO 4 The solution was slowly dripped into the above mixed solution and stirred continuously to produce a white precipitate. Adjust the pH to neutral with ammonia water and continue to stir for 1 hour. Put the obtained su...

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Abstract

The invention provides a sulfide-based triple-doped electron trapping material and a preparation method thereof and relates to the technical fields of light emission and light storage. The invention solves the problems that the conventional Eu<2+> and Sm<3+> double rare earth doped sulfide system has low optical excitation luminous intensity and low light storage performance. The chemical formula of the electron trapping material is Sr1-x-y-zEuxSmyRezS, wherein the Re represents Er, Dy, Tm, Yb, Tb or Gd; x, y and z are the molar fraction of the elements; x is more than or equal to 0.0001 and less than or equal to 0.02; y is more than or equal to 0.0001 and less than or equal to 0.02; and z is more than or equal to 0.0001 and less than or equal to 0.006. The electronic storage quantity of the electron trapping material is increased by 1 to 4 times as compared with the electronic storage quantity of the sulfide Eu<2+> and Sm<3+> double-doped material; the optical excitation luminous intensity and the storage performance of the material can be effectively improved; and the commercial requirement can be met.

Description

technical field [0001] The invention relates to the technical field of luminescence and light storage, in particular to a sulfide-based triple-doped electron capture material and a preparation method thereof. Background technique [0002] SrS: Eu 2+ , Sm 3+ and CaS:Eu 2+ , Sm 3+ Double rare earth doped sulfides are a typical class of electron-trapping materials, in which Eu 2+ is the luminous center, Sm 3+ Electronic traps are provided. The writing wavelength of this type of material is in the blue-green light band, the main readout band is in the near-infrared, the response spectrum covers 800-1600 nm, and the light-stimulated luminescence is in the red light band. Therefore, this type of material has applications in multidisciplinary technical fields such as near-infrared laser detection, laser spot display, optical fiber communication instructions, optical information storage, X-ray image processing, and infrared imaging. [0003] Currently, for Eu 2+ , Sm 3+ Dou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/84
Inventor 张家骅王英张霞郝振东
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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