Ion implantation method and ion implanter
The technology of an ion implanter and an ion source is applied in the field of ion implantation methods and equipment of solar cells, which can solve the problems of complex ion implantation process and high equipment cost, and achieve the effects of uniform shape and lower price.
Active Publication Date: 2016-01-20
秦皇岛博硕光电设备股份有限公司
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[0003] The purpose of the present invention is to provide an ion implantation method and an ion implanter with a simple process and low equipment cost for the existing ion implanter and ion implantation method to perform ion implantation process complex and high equipment cost.
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[0031] The present invention will be further described below in conjunction with the drawings and embodiments:
[0032] Such as figure 1 As shown, the ion implantation method of the present invention includes: generating a pure ion beam without metal impurities----accelerating the ion beam---introducing a pure ion beam without metal impurities into the target chamber by an extraction system---- The metal impurity-free ion beam performs uniform ion implantation on the target. In the process of ion implantation, multiple ions are simultaneously implanted into the target.
[0033] Using the above method for ion implantation, because the ion beam generated by the ion source is a pure ion beam without metal impurities (hereinafter referred to as pure ion beam), and there is no other metal in the process of introducing the pure ion beam from the ion source into the target chamber Ion doping, so there is no need to analyze and organize the ion beam, which simplifies the procedure of ion ...
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The invention provides an ion implanting method and an ion implanting machine, aiming to solve the problems that the existing ion implanting machine and the ion implanting method are complex in process and high in equipment cost. The method comprises the following steps of producing an ion beam without metal impurities by ion source, introducing pure strip-shaped ion beam without metal impurities into a target chamber through an educing seam; and implanting multiple kinds of ions without metal impurities into a target sheet by the ion beam. The ion implanting machine is driven by an RF (radio frequency) power source; an antenna is arranged outside the top of a discharge chamber; the discharge chamber is made of quartz; the ion beam is educed from the educing seam; the channel where the ion beam passes through in an educing system is made into a part which is made of silicon material or embedded silicon material; the target sheet can be moved in the length direction vertical to the educing seam in the target chamber; and the antenna is arranged along the length direction of the educing seam. By adopting the method and the implanting machine provided by the invention, the educed ion beam is not required to be analyzed and shaped, so that the price of the ion implanting machine is reduced by more than 50 percent.
Description
Technical field [0001] The invention relates to an ion implantation method and an ion implantation machine, in particular to an ion implantation method and equipment for solar cells. Background technique [0002] Ion implantation technology has increasingly demonstrated its advantages, especially in the application of doping P ions in silicon during the production process of solar cells. It has shown its remarkable advantages. It can reduce the photoelectric conversion rate from the original 18.7% of the POCl process is converted to 19.2%. This increase in conversion rate has brought significant economic and social benefits. The existing ion implantation technology usually uses metal as the material of the discharge chamber, so metal ions are generated during the discharge process, and the metal ions are doped in the ion beam drawn. The doped metal ions will reduce the work of the solar cell. Efficiency, in order to improve the purity of the extracted ion beam, it is usually nec...
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IPC IPC(8): C23C14/48
Inventor 崔保群曹耀辉李志军路瑞亮
Owner 秦皇岛博硕光电设备股份有限公司