Temperature control device and temperature control method thereof

Abstract

The invention provides a temperature control device and a temperature control method. The temperature control device and the temperature control method are used for controlling the temperature of circulating liquid flowing through an external device. The temperature control device comprises a refrigerating device, a circulating liquid circuit unit and a controller. The refrigerating device comprises an evaporating device and a condensing device. The circulating liquid circuit unit comprises an electric three-way valve and a temperature sensor. The circulating liquid flows into the evaporating device and the condensing device via the electric three-way valve. When the temperature sensor senses that the temperature of the circulating liquid is higher than a set value, the controller controls the electric three-way valve to increase the proportion of the circulating liquid flowing through the condensing device, and when the temperature of the circulating liquid is lower than the set value, the proportion of the circulating liquid flowing through the condensing device is reduced. The temperature control device and the temperature control method have the advantages that control complexity due to the fact that two bypass circuits are adopted in order to prevent excessively high exhaust temperature of a compressor is avoided, and the purpose of saving energy is achieved owing to the fact that a refrigerating system of the compressor is omitted.

Description

technical field [0001] The present invention relates to a temperature control device, and in particular to a temperature control device using process cooling water to cool a circulating liquid in a high temperature environment, and also relates to a temperature control method. Background technique [0002] The semiconductor industry has higher and higher requirements for temperature control range and precision, especially semiconductor processing equipment such as etching machines and chemical vapor deposition (Chemical Vapor Deposition, CVD). The etching process is divided into plasma etching, metal etching, dielectric film etching, reactive ion etching and so on. The temperature control range of different etching processes is different from -60°C to 200°C. This puts forward a higher design index for the temperature control device: it can not only meet the temperature control range required by multiple etching processes, but also achieve multiple indicators of energy savin...

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Problems solved by technology

However, this will cause the compressor discharge temperature to be too high, so the electronic expansion valve of the condensing bypass circuit needs to be opened to a certain degree.

[0005] Although this solves the above-mentioned two major problems of supply and demand contradiction and high exhaust temperature, it brings complexity, difficulty and instability of the control system, and will affect the debugging time, which will increase the cost

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