Check patentability & draft patents in minutes with Patsnap Eureka AI!

static ram

A static and partial technology, applied in the field of static RAM, can solve the problems of increasing amplitude and increasing power consumption, and achieve the effect of reducing power consumption, maintaining operation speed and reliability

Inactive Publication Date: 2015-12-09
SOCIONEXT INC
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such a reading speed is set, then when data is read from a memory cell with transistors having average or good characteristics, the transistors of the memory cell thus greatly change one of the pair of bit lines BL and BLX. voltage, as a result, that is, in other words, the magnitude of the amplitude becomes large and power consumption increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • static ram
  • static ram
  • static ram

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] First, the basic SRAM will be described.

[0056] image 3 is a diagram showing a general configuration of a basic SRAM.

[0057] A basic SRAM has a control circuit 1, a row decoder 2, a word line driver 3, a block signal circuit 4, a column decoder 5, a plurality of column switches CS0 to CSp, a data I / O circuit 6, multiple ((k+ 1) ×(m+1)) word lines WL, multiple (p+1) pairs of global bit lines GBL0 and GBLX0 to GBLp and GBLXp, multiple (p+1) pairs of extended global bit lines EGBL0 and EGBLX0 to EGBLp and EGBLXp, a plurality of ((k+1)×(p+1)) subblocks (SUBBLK) B00 to Bkp arranged corresponding to the plurality of word lines, and a plurality of bit lines provided corresponding to each pair of bit lines column circuits CL0 to CLp. As described above, the SRAM of this embodiment has a hierarchical structure in which pairs of short local bit lines are connected to the pair of long global bit lines.

[0058] The control circuit 1 generates an operation control signal s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A static RAM includes: a plurality of word lines; a plurality of pairs of local bit lines; a plurality of memory cells arranged in correspondence with intersections of the plurality of pairs of local bit lines and the plurality of word lines; a capacitance shared circuit arranged for each of the plurality of pairs of local bit lines; a common connection line connecting the plurality of capacitance shared circuits; and a pair of global bit lines connected to the plurality of pairs of local bit lines, wherein the capacitance shared circuit includes two N-channel transistors connected between the pair of local bit lines and the common connection line corresponding to each other.

Description

technical field [0001] Embodiments discussed herein relate to static RAM (random access memory). Background technique [0002] Static RAM (SRAM) does not need to be refreshed like DRAM (Dynamic Random Access Memory), and thus operates at high speed and is used as a high-speed memory. [0003] On the other hand, in recent years, there has been a need to reduce power consumption of memories. In order to realize a memory with lower power consumption, it is preferable to reduce the operating voltage. In the DRAM, if the operating voltage is reduced, the charging voltage of the capacitor provided in the memory cell is reduced, and therefore, it is preferable to frequently perform refresh operations, and thus, there is a problem that it is difficult to reduce power consumption. As a result, power consumption is reduced by reducing the operating voltage of the SRAM. [0004] A conventional SRAM has: a plurality of word lines and a plurality of pairs of bit lines arranged perpend...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/413
CPCG11C7/12G11C11/419
Inventor 森胁真一
Owner SOCIONEXT INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More