Semiconductor power conversion device

A power conversion device and power conversion technology, applied in the direction of output power conversion device, AC power input conversion to DC power output, electrical components, etc., can solve the problem of thermal damage of semiconductor components, achieve uniform temperature rise and prevent damage Effect

Inactive Publication Date: 2013-03-06
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of driving a motor with a PWM inverter, for example, during operation at an extremely low frequency or when the motor is in a locked-rotor state, there is a problem that

Method used

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  • Semiconductor power conversion device
  • Semiconductor power conversion device
  • Semiconductor power conversion device

Examples

Experimental program
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Example Embodiment

[0025] Embodiment 1

[0026] figure 1 It is a figure which shows the structure of the semiconductor power conversion device in Embodiment 1 of this invention. in figure 1 Among them, reference number 1 is a semiconductor power conversion device, reference number 10 is a DC power supply device connected between the P-side bus bar and the N-side bus bar of the semiconductor power conversion device, and reference number 2 is a three-phase voltage output from the semiconductor power conversion device 1 Driven motor. In addition, the DC power supply device 10 may be a power supply obtained by rectifying and smoothing AC power. In addition, the motor 2 may be any of an induction motor, a permanent magnet type motor, etc., and the type of the motor may be arbitrary.

[0027] In addition, reference numerals 5a to 5f denote U-phase, V-phase, and W-phase P-side and N-side semiconductor switching elements, which are switched on or off according to the gate signal from the gate signal genera...

Example Embodiment

[0046] Embodiment 2

[0047] Picture 10 It is a figure which shows the structure of the semiconductor power conversion device in Embodiment 2 of this invention. In addition, for figure 1 The same structures are marked with the same reference numerals, and their description is omitted. use Picture 10 Describes operations related to the embodiments of the present invention.

[0048] in Picture 10 In the gate signal generator 8b and figure 1 The gate signal generator 8a operates in the same way, for example, by comparing the magnitude of a carrier waveform such as a triangle wave with a voltage command, and when the voltage command is greater than the carrier waveform, it generates a gate signal (gate-on signal) that turns on the semiconductor switching element. When the voltage command is smaller than the carrier waveform, a gate signal (gate-off signal) that turns off the semiconductor switching element is generated. versus figure 1 The gate signal generator 8a is different in ...

Example Embodiment

[0052] Embodiment 3

[0053] Picture 11 It is a figure which shows an example of the structure of the semiconductor power conversion device in Embodiment 3 of this invention. In addition, for figure 1 and Picture 10 The same structures are marked with the same reference numerals, and their description is omitted. use Picture 11 Describes operations related to the embodiments of the present invention.

[0054] The element temperature detectors 16a and 16b are element temperature detectors that detect the element temperatures of the semiconductor switching element 5a and the semiconductor element 6a, respectively. As the structure of the element temperature detector, a component capable of detecting the temperature of a semiconductor element, such as a thermocouple, is joined in the vicinity of the semiconductor switching element and the semiconductor element, or a temperature detection is built in the semiconductor switching element and the semiconductor element Components with...

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PUM

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Abstract

The present invention provides a thermal damage protection device of a semiconductor power conversion device. Temperature of components used in the semiconductor power conversion device rises uniformly, thus the components of the semiconductor power conversion device can be prevented from heated and damaged. In the semiconductor power conversion device, the temperature margin of each component in relative to an allowed temperature is calculated, thus break-over rate of a component with low temperature margin is reduced to control the semiconductor power conversion device, thus the temperature of the component used in the semiconductor power conversion device rises uniformly.

Description

technical field [0001] The present invention relates to a semiconductor power conversion device, which uses a plurality of semiconductor elements to drive a motor, and adopts a modulation control method in order to prevent thermal damage of the semiconductor elements. Background technique [0002] When driving a motor, a PWM (Pulse Width Modulation) inverter equipped with a semiconductor element is often used as a power conversion device. In the case of driving a motor with a PWM inverter, for example, during operation at an extremely low frequency or when the motor is in a locked-rotor state, there is a problem that current flows concentratedly through a plurality of semiconductor elements in the above-mentioned inverter. Specific components that cause thermal damage to semiconductor components. [0003] In view of the above-mentioned problem, a method is disclosed in Patent Document 1, which focuses on the fact that there are differences in the instantaneous loss of semic...

Claims

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Application Information

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IPC IPC(8): H02M7/5387
Inventor 西村隼一今中晶原川雅哉
Owner MITSUBISHI ELECTRIC CORP
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