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Manufacturing method of luminescent device with annular reflecting layer

A technology for light-emitting devices and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve the problems that the uniformity of light emission of light-emitting devices needs to be improved.

Inactive Publication Date: 2015-07-15
JIANGSU WINAD LIGHTING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

therefore, figure 1 The light emitting uniformity of the light emitting device with the structure shown needs to be improved

Method used

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  • Manufacturing method of luminescent device with annular reflecting layer
  • Manufacturing method of luminescent device with annular reflecting layer
  • Manufacturing method of luminescent device with annular reflecting layer

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Experimental program
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Embodiment Construction

[0026] figure 2 The light-emitting device with the ring-shaped reflective layer produced by the manufacturing method proposed by the present invention has an overall roughened surface and the ring-shaped reflective layer, so the luminous efficiency and luminous uniformity can be greatly improved.

[0027] The manufacturing method that the present invention proposes, comprises the following steps:

[0028] (1) Using MOCVD to epitaxially grow the GaN buffer layer 202 on the substrate 201, the material of the substrate is sapphire, silicon carbide, zinc sulfide or gallium arsenide;

[0029] (2) Corroding the surface of the GaN buffer layer 202 with an alkaline solution, thereby forming a nanoscale serrated surface roughening layer 222 on the surface of the GaN buffer layer 202; in the present invention, in addition to using an alkaline solution to etch In addition to forming the surface roughening layer 222 on the surface of the GaN buffer layer 202, the surface of the GaN buff...

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Abstract

The invention discloses a manufacturing method of a luminescent device with an annular reflecting layer. The manufacturing method includes a first step of forming a gallium nitride (GaN) buffer layer, an n-type GaN layer, a multiple quantum well (MQW) luminescent layer, a p-type aluminum gallium nitride (AlGaN) layer, a p-type GaN layer, a transparent electrode layer and a p metal electrode on the upper surface of a substrate in sequence, a second step of forming a transparent metal ohmic contact layer on the lower surface of the substrate, and forming an n-type electrode under the transparent metal ohmic contact layer, a third step of forming surface roughening layers on the upper surface, the lower surface and all side faces of the luminescent device with the annular reflecting layer and the surface of the GaN buffer layer, and a fourth step of forming a reflecting layer on the upper surface of the p-type GaN layer, and the reflecting layer is in a square annular structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a light-emitting device with a ring-shaped reflective layer. Background technique [0002] Semiconductor light-emitting devices are increasingly widely used, especially in the trend of replacing incandescent and fluorescent lamps in lighting, but they still face some technical problems, especially the low light extraction efficiency. [0003] In recent years, in order to improve the luminous power and efficiency of light-emitting devices, vertical-structure light-emitting devices have been developed. Compared with front-mount light-emitting devices, vertical-structure light-emitting devices have many advantages. For a light-emitting device with a positive structure, since the n and p electrodes are on the same side of the substrate, the current must flow laterally between the n and p electrodes on the same side, which leads to current congestion ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/00
Inventor 虞浩辉周宇杭
Owner JIANGSU WINAD LIGHTING TECH