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Silicon nitride etching in a single wafer apparatus

A single wafer, silicon nitride layer technology, applied in the field of etching silicon nitride, can solve unsatisfactory problems, reduce wafer output, increase manufacturing costs, etc.

Active Publication Date: 2013-04-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, manufacturing costs are increased and wafer yields are reduced due to the wet bench requiring some time for "aging" before actual wafer production takes place
Accordingly, while existing methods generally achieve their intended purpose, they are not completely satisfactory in every respect

Method used

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  • Silicon nitride etching in a single wafer apparatus
  • Silicon nitride etching in a single wafer apparatus
  • Silicon nitride etching in a single wafer apparatus

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Embodiment Construction

[0022] The present invention relates to methods and tools for semiconductor manufacturing. It should be understood that the invention offers many different forms and embodiments, and that those specific embodiments are provided by way of illustration only. Furthermore, the scope of the present invention is limited only by the appended claims. In the drawings, the size and relative dimensions of tools, components, and elements may be exaggerated for clarity. It will be understood that when a component or element is referred to as being "on", "connected to", or "connected to" another component or element, it can be directly on, connected to, or connected to the other component or element. element, or may be an intervening component or element.

[0023] Cleaning processes for microfabrication are often implemented with wet bench tools or single wafer tools. In the wet bench approach to etch the SiN layer, a set of wafers is immersed in an acid bath (e.g., using phosphoric acid...

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Abstract

A single wafer etching apparatus and various methods implemented in a single wafer etching apparatus are disclosed. In an embodiment, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid / sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid / sulfuric acid mixture. The invention also provides silicon nitride etching in the single wafer apparatus

Description

technical field [0001] The present invention relates to the field of semiconductors, and more specifically, the present invention relates to a method for etching silicon nitride in a single wafer device. Background technique [0002] Silicon nitride (SiN) layers (also known as SiN films) have become closely related to the field of large scale integration (LSI) and other microelectronic fabrication technologies such as microelectromechanical systems (MEMS). Thus, selective etching of SiN layers is a step involved in many state-of-the-art microfabrication processes. Etch selectivity is measured as the ratio of etch rates between different materials. One example of an etching solution for selectively etching a SiN layer is hydrofluoric (HF) acid. However, HF acid lacks sufficient etch selectivity. For example, in HF, the etch rate of SiN is lower than that of SiO 2 About 0.1 times. Other methods of etching SiN use organic solutions containing anhydrous HF, resulting in rel...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
CPCH01L21/6708H01L21/31111
Inventor 于伟波吕学青周汉源黄国彬陈昭成章勋明
Owner TAIWAN SEMICON MFG CO LTD