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Treatment method for removing SixNy residue

A treatment method and residue technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of pollution, residues on the surface of silicon wafers, and re-texturing, etc., to achieve simple process, silicon Chip performance is not affected, the effect of improving yield

Inactive Publication Date: 2013-04-03
ALTUSVIA ENERGY TAICANG
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] High-concentration hydrofluoric acid has a good removal effect on SixNy membranes, but affected by cleaning time, solution concentration, and cleanliness, residues on the surface of silicon wafers may not be completely removed. At this time, it cannot be re-textured to avoid pollution

Method used

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  • Treatment method for removing SixNy residue

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Embodiment Construction

[0017] The present invention will be further illustrated below in conjunction with the accompanying drawings and specific embodiments. This embodiment is implemented on the premise of the technical solution of the present invention. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention.

[0018] Such as figure 1 A treatment method for removing the SixNy residue shown, the specific steps are as follows:

[0019] (1) Sodium hydroxide with a mass percentage of 1.1% and H with a volume ratio of 3.3% 2 o 2 Water mixture, heated to 65°C;

[0020] (2) Soak the silicon wafer in the above solution for 3 minutes;

[0021] (3) Soak the soaked silicon wafer in water for 3.5 minutes;

[0022] (4) Slowly pull the silicon wafer soaked in water, 50S to completely lift the silicon wafer from the water, and then dry it.

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Abstract

The invention discloses a treatment method for removing SixNy residue. The treatment method comprises the following specific steps of: (1) heating and warming an aqueous solution of sodium hydroxide and H2O; (2) putting silicon wafers into the solution to soak; (3) washing via water; and (4) slowly pulling the silicon wafers soaked in the water and subsequently drying. The treatment method can be used for treating abnormal wafers of SixNy films incompletely removed by hydrofluoric acid solution and performing re-felting after treating the abnormal wafers; the process is simple; the extra device is not needed; the property of the silicon wafers is not affected; and the yield of the production line is improved.

Description

technical field [0001] The invention relates to a treatment method for silicon wafers of solar cells, in particular to a treatment method for removing SixNy residues on silicon wafers. Background technique [0002] With the increasing quality requirements of the market, the requirements for the appearance of cells are becoming more and more stringent. Among them, many defective semi-finished products will be formed during the coating process, such as reddish film, rainbow film, chromatic aberration film, dirty film, etc. These abnormal films will cause a decrease in the yield of the production line and an increase in customer complaints, so these defective semi-finished products are dealt with Movies are inevitable. [0003] High-concentration hydrofluoric acid has a good removal effect on SixNy membranes, but affected by cleaning time, solution concentration, and cleanliness, residues on the surface of silicon wafers may not be completely removed. At this time, it cannot b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
Inventor 王虎
Owner ALTUSVIA ENERGY TAICANG