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Method for adjusting thicknesses and refractive indexes of antireflection films

A technology of anti-reflection film and refractive index, which is applied in the field of solar cells, can solve problems affecting the quality of finished solar cells, and achieve the effects of increasing the refractive index, ensuring uniformity, and reducing the refractive index

Active Publication Date: 2015-07-08
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the method for adjusting the thickness and the refractive index of the anti-reflection film in the prior art has certain limitations to the adjustment of the uniformity of the thickness of the anti-reflection film and the refractive index, thereby affecting the quality of the finished solar cell sheet

Method used

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  • Method for adjusting thicknesses and refractive indexes of antireflection films
  • Method for adjusting thicknesses and refractive indexes of antireflection films
  • Method for adjusting thicknesses and refractive indexes of antireflection films

Examples

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Embodiment 1

[0039] Step S101, setting multiple temperature zones.

[0040] In the embodiment of the present invention, the method for adjusting the thickness and refractive index of the anti-reflection film provided by the present invention is applied to chain PECVD equipment as an example for detailed description, but the scope of application of the present invention is not limited thereto.

[0041] The chain PECVD equipment is provided with three temperature zones, including a first temperature zone, a third temperature zone and a second temperature zone between the first temperature zone and the third temperature zone.

[0042] At the same time, the silicon wafers placed in the coating chamber are divided into five groups, which are respectively placed in the three temperature zones, wherein the first temperature zone and the third temperature zone correspond to the first group of silicon wafers and the fifth group of silicon wafers respectively. , The second temperature zone correspon...

Embodiment 2

[0080] In the embodiment of the present invention, the method for adjusting the thickness and refractive index of the anti-reflection film provided by the present invention will be introduced by taking the application of the method to chain PECVD as an example.

[0081] The method for adjusting the thickness and refractive index of the anti-reflection film provided by the present invention is realized according to the law that the refractive index of the anti-reflection film is directly proportional to the heating rate, and the thickness of the anti-reflection film is inversely proportional to the heating rate. When putting into practice the law that the refractive index of the anti-reflection film is directly proportional to the heating rate, and the thickness of the anti-reflection film is inversely proportional to the heating rate, this case takes chain PECVD equipment as an example to illustrate.

[0082] In this embodiment, a total of four coating processes of the anti-ref...

Embodiment 3

[0100] The difference from Example 2 is that in this example, two anti-reflection film coating processes are carried out in the same chain PECVD equipment, and the PECVD process prerequisites in the two coating processes are the same, and the silicon wafers operated twice are also The qualified silicon wafers etched by the same source are specifically: 90 qualified silicon wafers etched by the same source, and the 90 wafers are equally divided into 2 parts.

[0101] In one embodiment of the present invention, 45 silicon wafers are placed on a graphite boat, and the preconditions of the PECVD process are: the microwave power is 3000W; the process temperature is 350 degrees Celsius; the process gas flow rate is silane 530SCCM, ammonia 1830SCCM; The process pressure is 3.0e -1 mbar; the process speed is 170cm / min, and under the condition that the percentage ratio of the heating output power of each temperature zone in the PECVD equipment is 20%-55%-20%, the surface of the silicon...

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Abstract

The invention discloses a method for adjusting thicknesses and refractive indexes of antireflection films. The method includes setting a plurality of temperature zones; acquiring the thicknesses and the refractive indexes of antireflection films on surfaces of deposited silicon wafers in the temperature zones; adjusting heating rates for current to-be-deposited silicon wafers in corresponding temperature zones according to the acquired thicknesses and the acquired refractive indexes of the antireflection films on the surfaces of the deposited silicon wafers in the temperature zones; and forming antireflection films on surfaces of the to-be-deposited silicon wafers. The method has the advantages that the refractive indexes of the antireflection films can be reduced while the thicknesses of the antireflection films are increased; or the refractive indexes of the antireflection films can be increased while the thicknesses of the antireflection films are reduced; and limitation caused in a procedure for adjusting the uniformity of antireflection films in the prior art is overcome, the uniformity of the thicknesses and the uniformity of the refractive indexes of the formed antireflection films are guaranteed, and the quality of flaky solar cells is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for adjusting the thickness and refractive index of an anti-reflection film. Background technique [0002] In the current manufacturing process of solar cells, forming an anti-reflection film on the surface of a silicon wafer is an essential part of the manufacturing process of solar cells. The anti-reflection film on the surface of the silicon wafer has passivation and anti-reflection functions, and the quality of the anti-reflection film has a great influence on the performance of the solar cell. [0003] In order to detect the quality of the anti-reflection film, that is, to ensure the performance of the solar cell, after the anti-reflection film is formed, it is necessary to test the uniformity of the formed anti-reflection film through a measuring instrument. The uniformity is related to the thickness and refractive index of the anti-reflection film, and is a value that ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C14/24C23C14/54
CPCY02P70/50
Inventor 赵强
Owner YINGLI ENERGY CHINA