Method for adjusting thicknesses and refractive indexes of antireflection films
A technology of anti-reflection film and refractive index, which is applied in the field of solar cells, can solve problems affecting the quality of finished solar cells, and achieve the effects of increasing the refractive index, ensuring uniformity, and reducing the refractive index
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Embodiment 1
[0039] Step S101, setting multiple temperature zones.
[0040] In the embodiment of the present invention, the method for adjusting the thickness and refractive index of the anti-reflection film provided by the present invention is applied to chain PECVD equipment as an example for detailed description, but the scope of application of the present invention is not limited thereto.
[0041] The chain PECVD equipment is provided with three temperature zones, including a first temperature zone, a third temperature zone and a second temperature zone between the first temperature zone and the third temperature zone.
[0042] At the same time, the silicon wafers placed in the coating chamber are divided into five groups, which are respectively placed in the three temperature zones, wherein the first temperature zone and the third temperature zone correspond to the first group of silicon wafers and the fifth group of silicon wafers respectively. , The second temperature zone correspon...
Embodiment 2
[0080] In the embodiment of the present invention, the method for adjusting the thickness and refractive index of the anti-reflection film provided by the present invention will be introduced by taking the application of the method to chain PECVD as an example.
[0081] The method for adjusting the thickness and refractive index of the anti-reflection film provided by the present invention is realized according to the law that the refractive index of the anti-reflection film is directly proportional to the heating rate, and the thickness of the anti-reflection film is inversely proportional to the heating rate. When putting into practice the law that the refractive index of the anti-reflection film is directly proportional to the heating rate, and the thickness of the anti-reflection film is inversely proportional to the heating rate, this case takes chain PECVD equipment as an example to illustrate.
[0082] In this embodiment, a total of four coating processes of the anti-ref...
Embodiment 3
[0100] The difference from Example 2 is that in this example, two anti-reflection film coating processes are carried out in the same chain PECVD equipment, and the PECVD process prerequisites in the two coating processes are the same, and the silicon wafers operated twice are also The qualified silicon wafers etched by the same source are specifically: 90 qualified silicon wafers etched by the same source, and the 90 wafers are equally divided into 2 parts.
[0101] In one embodiment of the present invention, 45 silicon wafers are placed on a graphite boat, and the preconditions of the PECVD process are: the microwave power is 3000W; the process temperature is 350 degrees Celsius; the process gas flow rate is silane 530SCCM, ammonia 1830SCCM; The process pressure is 3.0e -1 mbar; the process speed is 170cm / min, and under the condition that the percentage ratio of the heating output power of each temperature zone in the PECVD equipment is 20%-55%-20%, the surface of the silicon...
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Abstract
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